Chinese Journal of Applied Chemistry ›› 2021, Vol. 38 ›› Issue (9): 1138-1153.DOI: 10.19894/j.issn.1000-0518.210221

• Review • Previous Articles     Next Articles

Research Progress on High Resolution Extreme Ultraviolet Photoresist

GAO Jia-Xing1,3, CHEN Long1,3, YU Jia-Ting1,3, GUO Xu-Dong1,3, HU Rui1,3, WANG Shuang-Qing1,3*, CHEN Jin-Ping2,3, LI Yi2,3*, YANG Guo-Qiang1,3*   

  1. 1Beijing National Laboratory for Molecular Sciences, CAS Key Laboratory of Photochemistry, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China
    2Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, China
    3University of Chinese Academy of Sciences, Beijing 100039, China
  • Received:2021-05-10 Accepted:2021-06-25 Published:2021-09-01 Online:2021-09-06
  • Supported by:
    National Natural Science Foundation of China (Nos.21873106, 21903085, 22073108, U20A20144, 22090012)

Abstract: Since the birth of the integrated circuit chip for more than half a century, the chip size has been continuously reduced, and the photolithography technology represented by extreme ultraviolet (EUV) has also developed significantly. At the same time, more advanced photoresist materials are needed to achieve higher precision photolithography patterns. Traditional polymer photoresist materials are limited in their use due to their large relative molecular mass, high-precision stripes and easy collapse. New photoresist materials with small relative molecular mass and uniform structure represented by molecular glass and inorganic metal complex photoresist have been widely developed at home and abroad. This article reviews the current development status and trends of new photoresist materials.

Key words: Extreme ultraviolet lithography, Extreme ultraviolet photoresist, Molecular glass photoresist, Inorganic metal complex photoresist, Lithography

CLC Number: