Chinese Journal of Applied Chemistry ›› 2021, Vol. 38 ›› Issue (9): 1154-1167.DOI: 10.19894/j.issn.1000-0518.210189

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Towards Extreme Ultraviolet Lithography: Progress and Challenges of Photoresists

CUI Hao1, WANG Qian-Qian1, WANG Xiao-Lin2, HE Xiang-Ming1*, XU Hong1*   

  1. 1Institute of Nuclear and New Energy Technology, Tsinghua University, Beijing 100084, China
    2Wuxi Vfortune Electronic Materials Technology Co., Ltd., Wuxi 214135, China
  • Received:2021-04-16 Accepted:2021-06-24 Published:2021-09-01 Online:2021-09-06
  • Supported by:
    National Natural Science Foundation of China (No.52073161)

Abstract: Lithography enabled nanoscale fabrication in the semiconductor industry; Its resolution and accuracy directly determined the integration, reliability, and cost of integrated circuits. Lithography is a micro-processing technology that uses the solubility switch of photoresists upon the exposure of ultraviolet light or electron beam, to transfer the pre-designed patterns on the mask to the substrate. With the continuous advancement of light sources used in semiconductor processing, from g-line and i-line to KrF (248 nm) and then to ArF (193 nm), the photoresist is also constantly developing to meet requirements of sensitivity, transmittance, and resistance to etching. Nowadays, extreme ultraviolet (EUV) lithography has been recognized as the next generation of photo-lithography technology; however, the corresponding photoresist is still facing substantial challenges. This article will briefly review the development of lithography light sources and the historical changes in corresponding photoresists; and then discuss the challenges, such as sensitivity, resolution, and etching resistance for EUV photoresists. Based on this, the future development direction of EUV photoresists is proposed.

Key words: Extreme ultraviolet lithography, Photoresist, Metal oxide nanoparticle

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