Research Progress on g-Line and i-Line Photoresists

doi:10.19894/j.issn.1000-0518.210265

Chinese Journal of Applied Chemistry ›› 2021, Vol. 38 ›› Issue (9): 1091-1104.DOI: 10.19894/j.issn.1000-0518.210265

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Research Progress on g-Line and i-Line Photoresists

GU Xue-Song¹, LI Xiao-Ou¹, LIU Ya-Dong^1,2*, JI Sheng-Xiang^1,2*

¹Huangpu Institute of Advanced Materials, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Guangzhou 510530, China
²Key Laboratory of Polymer Ecomaterials, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022, China

Received:2021-06-01 Accepted:2021-06-25 Published:2021-09-01 Online:2021-09-06
Supported by:
National Natural Science Foundation of China (No.51973212) and the Department of Science and Technology of Jilin Province (No.20200301017RQ)

Abstract

Abstract: Photoresist is an indispensable basic material in the integrated circuit field. As the increasingly fierce international competition, photoresist is monopolized by United States, Japan and other countries. The localization of photoresist is imminent. This review focuses on g-line (436 nm) and i-line (365 nm) photoresists that are currently used in the market. According to its composition, it is divided into novolak-diazonaphthoquinone(DNQ) photoresist, chemically amplified photoresist, molecular glass photoresist and other types to be summarized separately. Details of the novolak-DNQ photoresist are reported. The exposure mechanism and the effects of photosensitizers and additives on the performance of photoresist are also described. It is expected to provide information and reference for the development of g-line and i-line photoresists.

Key words: Photoresist, g-line, i-line, Novolak-diazonaphthoquinone photoresist, Chemically amplified photoresist, Molecular glass photoresist

CLC Number:

O644

GU Xue-Song, LI Xiao-Ou, LIU Ya-Dong, JI Sheng-Xiang. Research Progress on g-Line and i-Line Photoresists[J]. Chinese Journal of Applied Chemistry, 2021, 38(9): 1091-1104.

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Research Progress on g-Line and i-Line Photoresists

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