Extreme Ultraviolet Photoresist Inspection Platform in Shanghai Synchrotron Radiation Facility

doi:10.19894/j.issn.1000-0518.210190

Chinese Journal of Applied Chemistry ›› 2021, Vol. 38 ›› Issue (9): 1168-1174.DOI: 10.19894/j.issn.1000-0518.210190

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Extreme Ultraviolet Photoresist Inspection Platform in Shanghai Synchrotron Radiation Facility

ZHAO Jun^1,2, YANG Shu-Min², XUE Chao-Fan², WU Yan-Qing^2*, CHEN Yi-Fang¹, TAI Ren-Zhong²

¹School of Information Science and Technology, Fudan University, Shanghai 200433, China
²Shanghai Synchrotron Radiation Facility, Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai 201204, China

Received:2021-04-17 Accepted:2021-06-10 Published:2021-09-01 Online:2021-09-06
Supported by:
National Key Research and Development Program of China (Nos.2017YFA0206001, 2016YFA0401302, 2017YFA0403400) and the National Natural Science Foundation of China (Nos.11775291, 11875314)

Abstract

Abstract: As the next generation of lithography technology, extreme ultraviolet lithography has been given the mission of saving Moore′s law by the industry. Extreme ultraviolet photoresist is one of the core sub-technologies of extreme ultraviolet lithography. The inspection of its resolution, roughness, sensitivity and outgassing conditions is a necessary condition for the development of extreme ultraviolet photoresist and it is also an important part to optimize the resist performance. Extreme ultraviolet interference lithography based on synchrotron radiation is currently the most suitable method for testing the performance of extreme ultraviolet photoresist. According to related research and development needs, an extreme ultraviolet photoresist inspection platform based on this method has been established in Shanghai Synchrotron Radiation Facility(SSRF). By continuously improving the stability of the device, developing independent beam splitting grating mask manufacturing technology, and constantly exploring and optimizing the corresponding interference exposure process, the current inspection resolution has reached below 20 nm, which basically meets the corresponding requirements for the 7 nm process node of extreme ultraviolet lithography.

Key words: Extreme ultraviolet, Photoresist inspection, Interference lithography

CLC Number:

O652.2

ZHAO Jun, YANG Shu-Min, XUE Chao-Fan, WU Yan-Qing, CHEN Yi-Fang, TAI Ren-Zhong. Extreme Ultraviolet Photoresist Inspection Platform in Shanghai Synchrotron Radiation Facility[J]. Chinese Journal of Applied Chemistry, 2021, 38(9): 1168-1174.

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Extreme Ultraviolet Photoresist Inspection Platform in Shanghai Synchrotron Radiation Facility

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