Chinese Journal of Applied Chemistry ›› 2021, Vol. 38 ›› Issue (9): 1029-1078.DOI: 10.19894/j.issn.1000-0518.210278

• Review • Previous Articles     Next Articles

Advanced Lithography: Directed Self-Assembly

HU Xiao-Hua, XIONG Shi-Sheng*   

  1. School of Information Science and Technology, Fudan University, Shanghai 200433, China
  • Received:2021-06-09 Accepted:2021-07-15 Published:2021-09-01 Online:2021-09-06
  • Supported by:
    National Natural Science Foundation of China (No.61974030)

Abstract: Directed self-assembly (DSA) emerges as one of the most promising novel patterning techniques and has been listed as a candidate for the next generation of lithography by the international roadmap for devices and systems (IRDS). DSA is capable of breaking through the diffraction limit of conventional photolithography, producing high-resolution patterning. Due to the significant advantages such as high throughput and low cost, DSA has become a research hotspot in the semiconductor industry. Combined with other lithographies such as extreme ultraviolet (EUV) lithography, deep ultraviolet (DUV) lithography, ultraviolet lithography, and nanoimprint lithography (NIL), DSA can improve the resolution of the patterning as well as the density of the device. DSA has been employed to fabricate a series of nanoscale devices such as fin field-effect transistor (FinFET), bit patterned media (BPM), and memory, offering varied configurations for high-density integration and cost-efficient manufacturing. This review systematically illustrates the principle, materials, processing, and application of DSA, and further discovers the opportunities and challenges as well in the process of industrialization.

Key words: Directed self-assembly, Advanced lithography, Block copolymer

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