Chinese Journal of Applied Chemistry ›› 2021, Vol. 38 ›› Issue (9): 1189-1198.DOI: 10.19894/j.issn.1000-0518.210149

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Optimization of Development Process for Carbon Dioxide-Based Poly(cyclohexene carbonate) Electron Beam Resist

LU Xin-Yu1, MA Bin-Ze2, LUO Hao2, QI Huan1, LI Qiang2, WU Guang-Peng1*   

  1. 1MOE Laboratory of Macromolecular Synthesis and Functionalization, Department of Polymer Science and Engineering, Zhejiang University, Hangzhou 310027, China
    2State Key Laboratory of Modern Optical Instrumentation, College of Optical Science and Engineering, Zhejiang University, Hangzhou 310027, China
  • Received:2021-03-26 Accepted:2021-05-07 Published:2021-09-01 Online:2021-09-06
  • Supported by:
    National Natural Science Foundation of China (Nos.91956123, 51973186, 21674090), the National Key Research and Development Program of China (No.2017YFE0100200) and Zhejiang Provincial Natural Science Foundation of China (No.R21B040004)

Abstract: Electron beam lithography (EBL) is a promising candidate for the next-generation lithography, which has a significant competitive advantage in micro/nano fabrication, especially in lithography mask manufacturing. Development is one of the most critical steps in the lithography procedure. The development of high-performance photoresists and optimization of the best developing conditions are the basis of improving the efficiency of electron beam lithography. Based on the previous studies on carbon dioxide (CO2)-based polycarbonate resists, herein, we further explore the positive CO2-based poly(cyclohexene carbonate) (PCHC) and its electron beam lithography performance according to development process. The effects of development conditions, including developer, developing temperature and time were systematically explored. The optimal developer (n-hexane), and developing condition (0 ℃/30 s) were screened out, under which, the sensitivity, contrast, and resolution of PCHC are 208 μC/cm2, 3.06, and 53 nm, respectively. This performance is better than that of the commercial PMMA-950k EBL resist (with a resolution of 62 nm) under the same exposure conditions. We hope this study could provide a new type of electron beam resist with excellent performance and low cost for scientific research institutes and semiconductor fabrication.

Key words: Carbon dioxide, Polycarbonate, Electron beam lithography, Resist, Development condition, High resolution

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