Advanced Materials for Lithography

doi:10.19894/j.issn.1000-0518.220031

Chinese Journal of Applied Chemistry ›› 2022, Vol. 39 ›› Issue (6): 859-870.DOI: 10.19894/j.issn.1000-0518.220031

• Review • Next Articles

Advanced Materials for Lithography

Zi-Li LI¹(), Xing-Ran XU¹^,², Jiang-Hao ZHAN¹, Xiao-Hua HU¹, Zi-Ying ZHANG², Shi-Sheng XIONG¹()

^1.Center of Micro-Nano System，School of Information Science and Technology，Fudan University，Shanghai 200438，China
^2.School of Materials Engineering，Shanghai University of Engineering Science，Shanghai 201620，China

Received:2022-02-11 Accepted:2022-04-14 Published:2022-06-01 Online:2022-06-27
Contact: Zi-Li LI,Shi-Sheng XIONG
About author:sxiong@fudan.edu.cn
lizili@fudan.edu.cn；
Supported by:
the National Natural Science Foundation of China(U20A20227);Startup Funding of Fudan University(JIH1232090)

Abstract

Abstract:

With the technological development and progresses of the semiconductor industry， chip manufacturing is stepping forward to the advanced technology nodes under the impetus of Moore's Law. Meanwhile， the corresponding advanced materials for lithography are highly desired to satisfy the rapid development of advanced lithographic patterning. This review focuses on the composition and performances of materials for lithography. The photoresist from ultraviolet， deep ultraviolet， and extreme ultraviolet light as well as semiconducting photoresist and materials for directed self-assembly （DSA） are systematically summarized. Subsequently， the current market development and requirement of materials for lithography are critically examined. Finally， after a brief summary， an outlook for the prospective studies on advanced materials for lithography and the corresponding solutions to improve the domestic market occupancy is provided.

Key words: Advanced lithography, Directed self-assembly lithography, Photoresist, Semiconducting photoresist, Chemically amplified photoresists

CLC Number:

O649

Zi-Li LI, Xing-Ran XU, Jiang-Hao ZHAN, Xiao-Hua HU, Zi-Ying ZHANG, Shi-Sheng XIONG. Advanced Materials for Lithography[J]. Chinese Journal of Applied Chemistry, 2022, 39(6): 859-870.

Figures/Tables 4

References 57

1	XU H， KOSMA V， GIANNELIS E P， et al. In pursuit of Moore's Law： polymer chemistry in action［J］. Polym J， 2018， 50（1）： 45-55.
2	LI J， HU Y， YU L， et al. Recent advances of nanospheres lithography in organic electronics［J］. Small， 2021， 17（28）： 2100724.
3	https：//www.forbes.com/sites/patrickmoorhead/2021/07/26/intel-updates-idm-20-strategy-with-new-node-naming-and-technologies/？sh=5385922629d5［EB］.
4	https：//newsroomibmcom/2021-05-06-IBM-Unveils-Worlds-First-2-Nanometer-Chip-Technology，-Opening-a-New-Frontier-for-Semiconductors#assets_all［EB］.
5	LI L， LIU X， PAL S， et al. Extreme ultraviolet resist materials for sub-7 nm patterning［J］. Chem Soc Rev， 2017， 46（16）： 4855-4866.
6	MANOURAS T， ARGITIS P. High sensitivity resists for EUV lithography： a review of material design strategies and performance results［J］. Nanomaterials， 2020， 10（8）： 1593.
7	KWAK J， MISHRA A K， LEE J， et al. Fabrication of sub-3 nm feature size based on block copolymer self-assembly for next-generation nanolithography［J］. Macromolecules， 2017， 50（17）： 6813-6818.
8	朋小康，黄兴文，刘荣涛，等. 光刻胶成膜剂：发展与未来［J］. 应用化学， 2021， 38（9）： 1079-1090.
	PENG X K， HUANG X W， LIU R T， et al. Photoresist film-forming agent： development and future［J］. Chinese J Appl Chem， 2021， 38（9）： 1079-1090.
9	韦亚一. 超大规模集成电路先进光刻理论与应用［M］. 北京：科学出版社， 2016.
	WEI Y Y. Advanced lithography theory and application of VLSI［M］. Beijing： Science Press， 2016.
10	PI S， LI C， JIANG H， et al. Memristor crossbar arrays with 6-nm half-pitch and 2-nm critical dimension［J］. Nat Nanotechnol， 2019， 14（1）： 35-39.
11	LIAO P N， BARTON B， HSU P. Development of fluoro-free surfactant rinse solutions for EUV photoresists［J］. Proc SPIE， 2021， 11854： 1185409.
12	MURASE S， KINOSHITA K， HORIE K， et al. Photo-optical control with large refractive index changes by photodimerization of poly （vinyl cinnamate） film［J］. Macromolecules， 1997， 30（25）： 8088-8090.
13	CHEN Y， WANG Z， HE Y， et al. Light-enabled reversible self-assembly and tunable optical properties of stable hairy nanoparticles［J］. Proc Natl Acad Sci， 2018， 115（7）： E1391-E400.
14	YU J， XU N， WEI Q， et al. Novel ester acetal polymers and their application for positive-tone chemically amplified i-line photoresists［J］. J Mater Chem C， 2013， 1（6）： 1160-1167.
15	ZWEBER A E， WAGNER M， DEYOUNG J， et al. Mechanism of extreme ultraviolet photoresist development with a supercritical CO₂ compatible salt［J］. Langmuir， 2009， 25（11）： 6176-6190.
16	ITO H， SHERWOOD M. NMR analysis of chemically amplified resist films［J］. Proc SPIE， 1999， 3678： 104-115.
17	李小欧，顾雪松，刘亚栋，等. 193 nm 化学放大光刻胶研究进展［J］. 应用化学， 2021， 38（9）： 1105-1118.
	LI X O， GU X S， LIU Y D， et al. Research progress on chemically amplified 193 nm photoresists［J］. Chinese J Appl Chem， 2021， 38（9）： 1105-1118.
18	WANG Z， WYILE K， MARIC M. Synthesis of narrow molecular weight distribution copolymers for ArF photoresist materials by nitroxide mediated polymerization［J］. Macromol React Eng， 2017， 11（3）： 1600029.
19	LI Z， TANG M， LIANG S， et al. Bottlebrush polymers： from controlled synthesis， self-assembly， properties to applications［J］. Prog Polym Sci， 2021， 116： 101387.
20	OGLETREE D F. Molecular excitation and relaxation of extreme ultraviolet lithography photoresists［J］. Front Nanosci， 2016， 3678： 91-113.
21	FELIX N M， LIO A. Extreme ultraviolet （EUV） lithography XI［J］. Nanomaterials. 2020， 10： 1593.
22	TORTI E， PROTTI S， BOLLANTI S， et al. Aryl sulfonates as initiators for extreme ultraviolet lithography： applications in epoxy-based hybrid materials［J］. ChemPhotoChem， 2018， 2（5）： 425-432.
23	SHIRAI M， MAKI K， OKAMURA H， et al. Non-chemically amplified EUV resist based on PHS［J］. J Photopolym Sci Technol， 2009， 22（1）： 111-116.
24	SEKIGUCHI A， MATSUMTO Y. Study of acid diffusion behaves form PAG by using top coat method［J］. Proc SPIE， 2014， 9051： 90511S.
25	DING S， WANG C， SHI X， et al. Directly written photo-crosslinked fluorinated polycarbonate photoresist materials for second-order nonlinear optical （NLO） applications［J］. J Mater Chem C， 2019， 7（16）： 4667-4672.
26	LU X Y， LUO H， WANG K， et al. CO₂-based dual-tone resists for electron beam lithography［J］. Adv Funct Mater， 2021， 31（13）： 2007417.
27	LEBEL O， SOLDREA A. 9. Molecular glasses： emerging materials for the next generation［M］. Germany： De Gruyter， 2020： 239-260.
28	LUO C， XU C， LV L， et al. Review of recent advances in inorganic photoresists［J］. RSC Adv， 2020， 10（14）： 8385-8395.
29	WU L， HILBERS M F， LUGIER O， et al. Fluorescent Labeling to Investigate nanopatterning processes in extreme ultraviolet lithography［J］. ACS Appl Mater Interfaces， 2021， 13（43）： 51790-51798.
30	WU L， TIEKINK M， GIULIANI A， et al. Tuning photoionization mechanisms of molecular hybrid materials for EUV lithography applications［J］. J Mater Chem C， 2019， 7（1）： 33-47.
31	XU H， SAKAI K， KASAHRAR K， et al. Metal-organic framework-inspired metal-containing clusters for high-resolution patterning［J］. Chem Mater， 2018， 30（12）： 4124-4133.
32	BESPAOY I， ZHANG Y， HAITJEMA J， et al. Key role of very low energy electrons in tin-based molecular resists for extreme ultraviolet nanolithography［J］. ACS Appl Mater Interfaces， 2020， 12（8）： 9881-9889.
33	WU C， LU C， YU X， et al. An Efficient diazirine-based four-armed cross-linker for photo-patterning of polymeric semiconductors［J］. Angew Chem Int Ed， 2021， 60（39）： 21521-21528.
34	CHEN R， WANG X， LI X， et al. A comprehensive nano-interpenetrating semiconducting photoresist toward all-photolithography organic electronics［J］. Sci Adv， 2021， 7（25）： eabg0659.
35	ZHENG Y， YU Z， ZHANG S， et al. A molecular design approach towards elastic and multifunctional polymer electronics［J］. Nat Commun， 2021， 12（1）： 5701.
36	ZHENG Y Q， LIU Y， ZHONG D， et al. Monolithic optical microlithography of high-density elastic circuits［J］. Science， 2021， 373（6550）： 88-94.
37	胡晓华，熊诗圣. 先进光刻技术：导向自组装［J］. 应用化学， 2021， 38（9）： 1029-1078.
	HU X H， XIONG S S. Advanced lithography： directed self-assembly［J］. Chinese J Appl Chem， 2021， 38（9）： 1029-1078.
38	CHEN Y， XIONG S. Directed self-assembly of block copolymers for sub-10 nm fabrication［J］. Int J Extreme Manuf， 2020， 2（3）： 032006.
39	SINTUREL C， BATES F S， HILLMYER M A. High χ-low N block polymers： how far can we go？［J］. ACS Macro Lett， 2015， 4（9）： 1044-1050.
40	MURAMATSU M， NISHI T， IDO Y， et al. Defect mitigation of chemo-epitaxy DSA patterns［J］. Proc SPIE， 2020， 11326： 113260Y.
41	MURAMATSU M， NISHI T， IDO Y， et al. DSA process optimization for high volume manufacturing［J］. Proc SPIE， 2021， 11610： 116100N.
42	RUSSEL T， HJELM R P， SEEGER P. Temperature dependence of the interaction parameter of polystyrene and poly（methyl methacrylate）［J］. Macromolecules， 1990， 23（3）： 890-893.
43	YANG G W， WU G P， CHEN X， et al. Directed self-assembly of polystyrene-b-poly（propylene carbonate） on chemical patterns via thermal annealing for next generation lithography［J］. Nano Lett， 2017， 17（2）： 1233-1239.
44	ZHOU J， THAPAR V， CHEN Y， et al. Self-aligned assembly of a poly（2-vinylpyridine）-b-polystyrene-b-poly（2-vinylpyridine） triblock copolymer on graphene nanoribbons［J］. ACS Appl Mater Interfaces， 2021， 13（34）： 41190-41199.
45	KIM J H， JIN H M， YANG G G， et al. Smart nanostructured materials based on self-assembly of block copolymers［J］. Adv Funct Mater， 2020， 30（2）： 1902049.
46	ZAPSAS G， PATIL Y， GNANOU Y， et al. Poly（vinylidene fluoride）-based complex macromolecular architectures： from synthesis to properties and applications［J］. Prog Polym Sci， 2020， 104： 101231.
47	LO T Y， KRISHNAN M， LU K Y， et al. Silicon-containing block copolymers for lithographic applications［J］. Prog Polym Sci， 2018， 77： 19-68.
48	POUND-LANA G， BEZARDP， PETIT-ETIENNE C， et al. Dry-etching processes for high-aspect-ratio features with sub-10 nm resolution high-χ block copolymers［J］. ACS Appl Mater Interfaces， 2021， 13： 49184-49193.
49	LEGRAIN A， FLEURY G， MUMTAZ M， et al. Straightforward integration flow of a silicon-containing block copolymer for line-space patterning［J］. ACS Appl Mater Interfaces， 2017， 9（41）： 43043-43050.
50	JO S， JEON S， KIM H， et al. Balanced interfacial interactions for fluoroacrylic block copolymer films and fast electric field directed assembly［J］. Chem Mater， 2020， 32（49）： 9633-9641.
51	SUH H S， MANNAERT G， VANDENBROECK N， et al. Development of high-chi directed self-assembly process based on key learning from PS-b-PMMA system［J］. Proc SPIE， 2021， 11612： 116120P.
52	PANDAV G， DURAND W J， ELLOSPON C J， et al. Directed self-assembly of block copolymers using chemical patterns with sidewall guiding lines， backfilled with random copolymer brushes［J］. Soft Matter， 2015， 11（47）： 9107-9114.
53	HAB E， KNG H， LIU C C， et al. Graphoepitaxial assembly of symmetric block copolymers on weakly preferential substrates［J］. Adv Mater， 2010， 22（38）： 4325-4329.
54	CHENG J， SANDERS D， TRUONG H， et al. Simple and versatile methods to integrate directed self-assembly with optical lithography using a polarity-switched photoresist［J］. ACS Nano， 2010， 4（8）： 4815-4823.
55	LIU C C， HAN E， ONSES M， et al. Fabrication of lithographically defined chemically patterned polymer brushes and mats［J］. Macromolecules， 2011， 44（7）： 1876-1885.
56	HAN E， STUEN K， LEOLUKMAN M， et al. Perpendicular orientation of domains in cylinder-forming block copolymer thick films by controlled interfacial interactions［J］. Macromolecules， 2009， 42（13）： 4896-4901.
57	https：//www.researchandmarkets.com/reports/5401833/global-and-china-photoresist-industry-report［EB］.

[1]	HU Xiao-Hua, XIONG Shi-Sheng. Advanced Lithography: Directed Self-Assembly [J]. Chinese Journal of Applied Chemistry, 2021, 38(9): 1029-1078.
[2]	PENG Xiao-Kang, HUANG Xing-Wen, LIU Rong-Tao, ZHANG Yong-Wen, ZHANG Shi-Yang, LIU Yi-Dong, MIN Yong-Gang. Photoresist Film-Forming Agent: Development and Future [J]. Chinese Journal of Applied Chemistry, 2021, 38(9): 1079-1090.
[3]	GU Xue-Song, LI Xiao-Ou, LIU Ya-Dong, JI Sheng-Xiang. Research Progress on g-Line and i-Line Photoresists [J]. Chinese Journal of Applied Chemistry, 2021, 38(9): 1091-1104.
[4]	LI Xiao-Ou, GU Xue-Song, LIU Ya-Dong, JI Sheng-Xiang. Research Progress on Chemically Amplified 193 nm Photoresists [J]. Chinese Journal of Applied Chemistry, 2021, 38(9): 1105-1118.
[5]	GUO Hai-Quan, YANG Zheng-Hua, GAO Lian-Xun. Progress Research on Photosensitive Polyimide [J]. Chinese Journal of Applied Chemistry, 2021, 38(9): 1119-1137.
[6]	GAO Jia-Xing, CHEN Long, YU Jia-Ting, GUO Xu-Dong, HU Rui, WANG Shuang-Qing, CHEN Jin-Ping, LI Yi, YANG Guo-Qiang. Research Progress on High Resolution Extreme Ultraviolet Photoresist [J]. Chinese Journal of Applied Chemistry, 2021, 38(9): 1138-1153.
[7]	CUI Hao, WANG Qian-Qian, WANG Xiao-Lin, HE Xiang-Ming, XU Hong. Towards Extreme Ultraviolet Lithography: Progress and Challenges of Photoresists [J]. Chinese Journal of Applied Chemistry, 2021, 38(9): 1154-1167.
[8]	ZHAO Jun, YANG Shu-Min, XUE Chao-Fan, WU Yan-Qing, CHEN Yi-Fang, TAI Ren-Zhong. Extreme Ultraviolet Photoresist Inspection Platform in Shanghai Synchrotron Radiation Facility [J]. Chinese Journal of Applied Chemistry, 2021, 38(9): 1168-1174.

Advanced Materials for Lithography

RichHTML

PDF

Knowledge

Abstract

Cite this article

share this article

Figures/Tables 4

References 57

Related Articles 8

Recommended Articles

Metrics

Comments