g-线/i-线光刻胶研究进展

doi:10.19894/j.issn.1000-0518.210265

摘要/Abstract

摘要： 光刻胶是半导体领域中不可或缺的关键材料。光刻胶行业常年被日本和美国等国家所垄断,随着国际竞争的日益激烈,光刻胶国产化迫在眉睫。本文针对g-线(436 nm)和i-线(365 nm)光刻胶进行了总结,按照其组成不同,将其分为酚醛树脂/重氮萘醌、化学放大胶和分子玻璃等类型,并分别进行介绍。目前,市场用量较大的g/i-线光刻胶主要是酚醛树脂/重氮萘醌系列,本文详细介绍了国内外对酚醛树脂/重氮萘醌的研究报道,阐述了其曝光机理以及光敏剂、添加剂等对光刻胶性能的影响。本文期望能对g-线/i-线光刻胶的开发提供参考。

关键词: 光刻胶, g-线, i-线, 酚醛树脂/重氮萘醌, 化学放大胶, 分子玻璃

Abstract: Photoresist is an indispensable basic material in the integrated circuit field. As the increasingly fierce international competition, photoresist is monopolized by United States, Japan and other countries. The localization of photoresist is imminent. This review focuses on g-line (436 nm) and i-line (365 nm) photoresists that are currently used in the market. According to its composition, it is divided into novolak-diazonaphthoquinone(DNQ) photoresist, chemically amplified photoresist, molecular glass photoresist and other types to be summarized separately. Details of the novolak-DNQ photoresist are reported. The exposure mechanism and the effects of photosensitizers and additives on the performance of photoresist are also described. It is expected to provide information and reference for the development of g-line and i-line photoresists.

Key words: Photoresist, g-line, i-line, Novolak-diazonaphthoquinone photoresist, Chemically amplified photoresist, Molecular glass photoresist

中图分类号:

O644

顾雪松, 李小欧, 刘亚栋, 季生象. g-线/i-线光刻胶研究进展[J]. 应用化学, 2021, 38(9): 1091-1104.

GU Xue-Song, LI Xiao-Ou, LIU Ya-Dong, JI Sheng-Xiang. Research Progress on g-Line and i-Line Photoresists[J]. Chinese Journal of Applied Chemistry, 2021, 38(9): 1091-1104.

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