应用化学 ›› 2021, Vol. 38 ›› Issue (9): 1091-1104.DOI: 10.19894/j.issn.1000-0518.210265

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g-线/i-线光刻胶研究进展

顾雪松1, 李小欧1, 刘亚栋1,2*, 季生象1,2*   

  1. 1中科院长春应化所黄埔先进材料研究院,广州 510530
    2中国科学院长春应用化学研究所,生态环境高分子材料重点实验室,长春 130022
  • 收稿日期:2021-06-01 接受日期:2021-06-25 出版日期:2021-09-01 发布日期:2021-09-06
  • 通讯作者: *E-mail:ydliu26@ciac.ac.cn; sji@ciac.ac.cn
  • 基金资助:
    国家自然科学基金(No.51973212)和吉林省科技发展计划中青年科技创新领军人才及团队项目(No.20200301017RQ)资助

Research Progress on g-Line and i-Line Photoresists

GU Xue-Song1, LI Xiao-Ou1, LIU Ya-Dong1,2*, JI Sheng-Xiang1,2*   

  1. 1Huangpu Institute of Advanced Materials, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Guangzhou 510530, China
    2Key Laboratory of Polymer Ecomaterials, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022, China
  • Received:2021-06-01 Accepted:2021-06-25 Online:2021-09-01 Published:2021-09-06
  • Supported by:
    National Natural Science Foundation of China (No.51973212) and the Department of Science and Technology of Jilin Province (No.20200301017RQ)

摘要: 光刻胶是半导体领域中不可或缺的关键材料。 光刻胶行业常年被日本和美国等国家所垄断,随着国际竞争的日益激烈,光刻胶国产化迫在眉睫。 本文针对g-线(436 nm)和i-线(365 nm)光刻胶进行了总结,按照其组成不同,将其分为酚醛树脂/重氮萘醌、化学放大胶和分子玻璃等类型,并分别进行介绍。 目前,市场用量较大的g/i-线光刻胶主要是酚醛树脂/重氮萘醌系列,本文详细介绍了国内外对酚醛树脂/重氮萘醌的研究报道,阐述了其曝光机理以及光敏剂、添加剂等对光刻胶性能的影响。 本文期望能对g-线/i-线光刻胶的开发提供参考。

关键词: 光刻胶, g-线, i-线, 酚醛树脂/重氮萘醌, 化学放大胶, 分子玻璃

Abstract: Photoresist is an indispensable basic material in the integrated circuit field. As the increasingly fierce international competition, photoresist is monopolized by United States, Japan and other countries. The localization of photoresist is imminent. This review focuses on g-line (436 nm) and i-line (365 nm) photoresists that are currently used in the market. According to its composition, it is divided into novolak-diazonaphthoquinone(DNQ) photoresist, chemically amplified photoresist, molecular glass photoresist and other types to be summarized separately. Details of the novolak-DNQ photoresist are reported. The exposure mechanism and the effects of photosensitizers and additives on the performance of photoresist are also described. It is expected to provide information and reference for the development of g-line and i-line photoresists.

Key words: Photoresist, g-line, i-line, Novolak-diazonaphthoquinone photoresist, Chemically amplified photoresist, Molecular glass photoresist

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