应用化学 ›› 2021, Vol. 38 ›› Issue (9): 1138-1153.DOI: 10.19894/j.issn.1000-0518.210221

• 综合评述 • 上一篇    下一篇

高分辨率极紫外光刻胶的研究进展

高佳兴1,3, 陈龙1,3, 玉佳婷1,3, 郭旭东1,3, 胡睿1,3, 王双青1,3*, 陈金平2,3, 李嫕2,3*, 杨国强1,3*   

  1. 1北京分子科学国家研究中心,中国科学院化学研究所光化学重点实验室,北京 100190
    2中国科学院理化技术研究所光化学转换与功能材料重点实验室,北京 100190
    3中国科学院大学,北京 100039
  • 收稿日期:2021-05-10 接受日期:2021-06-25 出版日期:2021-09-01 发布日期:2021-09-06
  • 通讯作者: *E-mail:g1704@iccas.ac.cn; yili@ipc.ac.cn; gqyang@iccas.ac.cn
  • 基金资助:
    国家自然科学基金(Nos.21873106, 21903085, 22073108, U20A20144, 22090012)资助

Research Progress on High Resolution Extreme Ultraviolet Photoresist

GAO Jia-Xing1,3, CHEN Long1,3, YU Jia-Ting1,3, GUO Xu-Dong1,3, HU Rui1,3, WANG Shuang-Qing1,3*, CHEN Jin-Ping2,3, LI Yi2,3*, YANG Guo-Qiang1,3*   

  1. 1Beijing National Laboratory for Molecular Sciences, CAS Key Laboratory of Photochemistry, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China
    2Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, China
    3University of Chinese Academy of Sciences, Beijing 100039, China
  • Received:2021-05-10 Accepted:2021-06-25 Published:2021-09-01 Online:2021-09-06
  • Supported by:
    National Natural Science Foundation of China (Nos.21873106, 21903085, 22073108, U20A20144, 22090012)

摘要: 自集成电路芯片诞生半个多世纪以来,芯片尺寸在不断减少,以极紫外光刻为代表的光刻技术也有了显著的发展。 同时,实现更高精度的光刻图案需要更加先进的光刻胶材料。 传统的聚合物光刻胶材料因其相对分子质量大、高精度条纹易坍塌等缺陷使其使用受到限制。 以分子玻璃和无机金属配合物光刻胶为代表的相对分子质量小、结构均一的新型光刻胶材料在国内外得到了广泛发展。 本文对现阶段新型极紫外光刻胶材料的发展现状和趋势做了评述。

关键词: 极紫外光刻, 极紫外光刻胶, 分子玻璃光刻胶, 无机金属配合物光刻胶, 光刻

Abstract: Since the birth of the integrated circuit chip for more than half a century, the chip size has been continuously reduced, and the photolithography technology represented by extreme ultraviolet (EUV) has also developed significantly. At the same time, more advanced photoresist materials are needed to achieve higher precision photolithography patterns. Traditional polymer photoresist materials are limited in their use due to their large relative molecular mass, high-precision stripes and easy collapse. New photoresist materials with small relative molecular mass and uniform structure represented by molecular glass and inorganic metal complex photoresist have been widely developed at home and abroad. This article reviews the current development status and trends of new photoresist materials.

Key words: Extreme ultraviolet lithography, Extreme ultraviolet photoresist, Molecular glass photoresist, Inorganic metal complex photoresist, Lithography

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