应用化学 ›› 2019, Vol. 36 ›› Issue (9): 977-995.DOI: 10.11944/j.issn.1000-0518.2019.09.190141

• 综合评述 • 上一篇    下一篇

掺杂在有机场效应晶体管中的应用进展

邱禹铭,江以航,鲁广昊()   

  1. 西安交通大学前沿科学技术研究院 西安 710054
  • 收稿日期:2019-05-15 接受日期:2019-07-08 出版日期:2019-09-05 发布日期:2019-09-05
  • 通讯作者: 鲁广昊
  • 基金资助:
    国家自然科学基金(51473132,21574103)和中国博士后科学基金资助项目(2015M580841,2016T90910)资助

Application Progress of Doping in Organic Field-Effect Transistors

QIU Yuming,JIANG Yihang,LU Guanghao()   

  1. Frontier Institute of Science and Technology,Xi'an Jiaotong University,Xi'an 710054,China
  • Received:2019-05-15 Accepted:2019-07-08 Published:2019-09-05 Online:2019-09-05
  • Contact: Guanghao LU
  • Supported by:
    Supported by the National Natural Science Foundation of China(No.51473132, No.21574103), the China Postdoctoral Science Foundation(No.2015M580841, No.2016T90910)

摘要:

有机场效应晶体管(OFETs)作为一种新型的电子器件,以其柔性、可大规模简单制备等优势获得了广泛的关注。 但是,OFETs面临着器件性能不足、调控手段复杂等问题。人们尝试使用掺杂对这些问题加以解决。 本文结合本课题组的相关工作,对掺杂技术在OFETs上的应用进行归纳、总结和展望。

关键词: 有机场效应晶体管, 有机半导体, 掺杂, 活性氧

Abstract:

Organic field-effect transistors(OFETs) as a new type of electronic devices have attracted wide attention due to their flexibility and large scale and simple fabrication. However, OFETs are confronted with problems such as inadequate device performance and complex control methods. Researchers endeavor to solve these problems by doping. In this review, we summarize the application of doping technology in OFETs based on the related work of our group and prospect the future development.

Key words: organic field-effect transistors, organic semi-conductors, doping, reactive oxygen