中华医学超声杂志

应用化学 ›› 1996, Vol. 0 ›› Issue (2): 115-116.

• 研究简报 • 上一篇    下一篇

掺杂元素的Lewis酸强度对掺杂In2O3电性质的影响

文世杰1, G. Campet2, 洪广言3   

  1. 1. Lawrence Berkeley Laboratory, Berkeley CA94720, USA;
    2. Laboratoire de Chimie du Solide du CNRS, Universite de Bordeaux I, 33405 Talence Cedex, France;
    3. 中国科学院长春应用化学研究所 长春 130022
  • 收稿日期:1995-08-18 修回日期:1995-11-27 出版日期:1996-04-10 发布日期:1996-04-10

Effect of the Lewis Acid Strength of Doping Elements on Electronic Properties of Doped In2O3

Wen Shijie1, G. Campet2, Hong Guangyan3   

  1. 1. Lawrence Berkeley Laboratory, Berkeley CA94720, USA;
    2. Laboratoire de Chimie du Solide du CNRS, Universite de Bordeaux I, 33405 Talence Cedex, France;
    3. Changchun Institute of Applied Cherrzistry, Chinese Academy of Sciences, Changchun 130022
  • Received:1995-08-18 Revised:1995-11-27 Published:1996-04-10 Online:1996-04-10

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摘要： Lewis酸是一种能够接受一对电子的物质.Usanovitch提出一个更为广泛的概念,即Lewis酸是一种能与阴离子结合或接受电子的化学物质.

关键词: Lewis酸, In2O3, 掺杂

Abstract: This paper discussed the relation between the electronic properties of doped In2O3 and the Lewis acid strength of doping elements. The authors pointed out the key to the choice of appropriate doping elements for improving electric properties of doped In2O3. The carrier concentration and mobility of doped In2O3 increased when Ti4+,Ge4+ and Sn4+ were used as doping elements.

Key words: Lewis acid, In2O3, doping

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