Application Progress of Doping in Organic Field-Effect Transistors

doi:10.11944/j.issn.1000-0518.2019.09.190141

Chinese Journal of Applied Chemistry ›› 2019, Vol. 36 ›› Issue (9): 977-995.DOI: 10.11944/j.issn.1000-0518.2019.09.190141

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Application Progress of Doping in Organic Field-Effect Transistors

QIU Yuming,JIANG Yihang,LU Guanghao()

Frontier Institute of Science and Technology,Xi'an Jiaotong University,Xi'an 710054,China

Received:2019-05-15 Accepted:2019-07-08 Published:2019-09-05 Online:2019-09-05
Contact: Guanghao LU
Supported by:
Supported by the National Natural Science Foundation of China(No.51473132, No.21574103), the China Postdoctoral Science Foundation(No.2015M580841, No.2016T90910)

Abstract

Abstract:

Organic field-effect transistors(OFETs) as a new type of electronic devices have attracted wide attention due to their flexibility and large scale and simple fabrication. However, OFETs are confronted with problems such as inadequate device performance and complex control methods. Researchers endeavor to solve these problems by doping. In this review, we summarize the application of doping technology in OFETs based on the related work of our group and prospect the future development.

Key words: organic field-effect transistors, organic semi-conductors, doping, reactive oxygen

QIU Yuming,JIANG Yihang,LU Guanghao. Application Progress of Doping in Organic Field-Effect Transistors[J]. Chinese Journal of Applied Chemistry, 2019, 36(9): 977-995.

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Application Progress of Doping in Organic Field-Effect Transistors

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