Abstract: The TiO₂ semiconductor film on Al₂O₃ and glass substrates was prepared by homogeneous precipitation with titanyl sulfate and urea as raw materials. Under low concentration of TiOSO₄ the increase of urea concentration could accelerate the formation of the film.The thickness of the film prepared at 70～80℃ for 1 h and calcined at 600℃ for 0.5 h (1 cycle) was over 0.2 μm while the thickness obtained by 4 cycles was over 0.8μm. The adhesion of the film was good. After calcining at 1000℃ for 0.5 h in H₂ the film was crystallized into rutile phase having a square resistance of 1.3 × 10⁴ Ω/□.

Key words: TiO₂, semiconductor film, preparation