Effect of the Lewis Acid Strength of Doping Elements on Electronic Properties of Doped In2O3

Chinese Journal of Applied Chemistry ›› 1996, Vol. 0 ›› Issue (2): 115-116.

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Effect of the Lewis Acid Strength of Doping Elements on Electronic Properties of Doped In₂O₃

Wen Shijie¹, G. Campet², Hong Guangyan³

1. Lawrence Berkeley Laboratory, Berkeley CA94720, USA;
2. Laboratoire de Chimie du Solide du CNRS, Universite de Bordeaux I, 33405 Talence Cedex, France;
3. Changchun Institute of Applied Cherrzistry, Chinese Academy of Sciences, Changchun 130022

Received:1995-08-18 Revised:1995-11-27 Published:1996-04-10 Online:1996-04-10

Abstract

Wen Shijie, G. Campet, Hong Guangyan. Effect of the Lewis Acid Strength of Doping Elements on Electronic Properties of Doped In₂O₃[J]. Chinese Journal of Applied Chemistry, 1996, 0(2): 115-116.

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Effect of the Lewis Acid Strength of Doping Elements on Electronic Properties of Doped In₂O₃

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