Chinese Journal of Applied Chemistry ›› 1996, Vol. 0 ›› Issue (2): 11-14.

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The Electrodeposition of Nickel-Tungsten Films on p-type silicon

Guo Yong1,3, Zhang Guoqing1, Yao Suwei1, Guo Hetong1, Gong Zhenglie2   

  1. 1. Department of Applied Chmistry, Tianjin University, Tianjin 300072;
    2. Tianjin Institute of Technofogy, Tianjin
  • Received:1995-06-24 Revised:1995-10-20 Published:1996-04-10 Online:1996-04-10

Abstract: Nickel-tungsten films with different content of W and different structure were prepared by means of galvanostatic electrodeposition. The influence of temperature, pH value and current density on the composition of deposits was investigated. Experimental results showed that a rise in temperature is favorable to the increase of W content. X-ray diffraction was used to determine the film structure. With increase of W content. the f. c. c lattice of nickel is distorted, and the average size of grains becomes smaller. When the content of W in deposits reaches to about 56%, the size of grains decreases to below 2 nm and the film has an amorphous structure.

Key words: p-type silicon, nickel-tungsten alloy, electrodeposition, amorphous state