Chinese Journal of Applied Chemistry ›› 1994, Vol. 0 ›› Issue (6): 81-84.

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On Mechanism of Electropolishing of Copper Electrode

Li Xueliang, Lin Jianxin   

  1. Hefei Polytechnical University, Heifei 230009
  • Received:1994-01-31 Revised:1994-04-25 Published:1994-12-10 Online:1994-12-10

Abstract: The fast triangular wave and potential sweep techniques were used to study the anodic film of Cu formed in 12.0mol/L H3PO4. The solid film formed on copper during electropolishing is a n-type semiconductor and has a depth of 0.75~5.6nm and capacitance of 7~12μF/cm2, EDAX and XPS results showed that the predominate constitution of the film was Cu2O and Cu2O·H2O. The mechanism of the electropolishing has been discussed.

Key words: copper, electropolishing, anodic film