中华医学超声杂志

应用化学 ›› 1998, Vol. 0 ›› Issue (3): 35-38.

• 研究论文 • 上一篇    下一篇

p-Si上电沉积Ni-W-P薄膜的结构与热稳定性

李爱昌1, 张国庆2, 刘冰2   

  1. 1. 廊坊师范专科学校化学系 廊坊065000;
    2. 天津大学应用化学系 天津
  • 收稿日期:1997-11-21 修回日期:1998-03-20 出版日期:1998-06-10 发布日期:1998-06-10

Structure and the Thermal Stability of Electrodeposited Ni-W-P Alloy-Films on Silicon

Li Aichang1, Zhang Guoqing2, Liu Bing2   

  1. 1. Department of Chemistry, Langfang Teacher's College, Langfang 065000;
    2. Department of Applied Chemistry, Tianjin University, Tianjin
  • Received:1997-11-21 Revised:1998-03-20 Published:1998-06-10 Online:1998-06-10

PDF

514

被引次数

2

摘要： 研究了p-Si上恒电流沉积Ni-W-P合金薄膜组成与结构的关系,讨论了镀层的组成、结构随沉积时间的变化。测定了非晶合金的晶体结构随热处理温度的改变以及DTA曲线,结果表明,非晶Ni-W-P合金在晶化过程中形成两个纳米超微晶相,非晶Ni-W-P薄膜的热稳定性远高于通常使用的非晶Ni-P薄膜。

关键词: p-Si, 电沉积Ni-W-P薄膜, 结构, 热稳定性

Abstract: It is found that the electroplating time affected the chemical composition of the electrodeposited Ni-W-P alloy films on p-silicon and their structures. The DTA results showed that the crystal structure of the amorphous Ni-W-P film does not change drastically at 200 ℃ to 500 ℃ under N2. The Ni-W-P film has better thermal stability than that of amorphous Ni-P film.

Key words: p-type silicon, electrodeposited Ni-W-P film, structure, thermal stability

网站版权 © 应用化学     本网站备案：吉ICP备12000082号