中华医学超声杂志

应用化学 ›› 1994, Vol. 0 ›› Issue (6): 81-84.

• 研究论文 • 上一篇    下一篇

铜的电抛光机理探讨

李学良, 林建新   

  1. 合肥工业大学化工系 合肥 230009
  • 收稿日期:1994-01-31 修回日期:1994-04-25 出版日期:1994-12-10 发布日期:1994-12-10
  • 基金资助:
    国家自然科学基金资助项目

On Mechanism of Electropolishing of Copper Electrode

Li Xueliang, Lin Jianxin   

  1. Hefei Polytechnical University, Heifei 230009
  • Received:1994-01-31 Revised:1994-04-25 Published:1994-12-10 Online:1994-12-10

PDF

401

被引次数

6 | 2

摘要： 电化学法研究和现场界面电容测量表明,电抛光时,铜/溶液界面存在n-型半导体固态膜。EDAX和XPS检测表明,该膜主要由Cu2O和Cu2O·H2O(ad)构成。探讨了铜在H3PO4溶液中电抛光机理。

关键词: 铜, 电抛光, 阳极界面膜

Abstract: The fast triangular wave and potential sweep techniques were used to study the anodic film of Cu formed in 12.0mol/L H3PO4. The solid film formed on copper during electropolishing is a n-type semiconductor and has a depth of 0.75～5.6nm and capacitance of 7～12μF/cm2, EDAX and XPS results showed that the predominate constitution of the film was Cu2O and Cu2O·H2O. The mechanism of the electropolishing has been discussed.

Key words: copper, electropolishing, anodic film

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