应用化学 ›› 1996, Vol. 0 ›› Issue (6): 31-34.

• 研究论文 • 上一篇    下一篇

HDEHP萃取Ga(Ⅲ)的动力学

刘桂华2, 杨永会1, 孙思修1, 李小斌2   

  1. 1. 山东大学化学系 济南;
    2. 中南工业大学冶金系 长沙 410083
  • 收稿日期:1996-03-13 修回日期:1996-06-17 出版日期:1996-12-10 发布日期:1996-12-10

The Extraction Kinetics of Ga(Ⅲ) with HDEHP

Liu Guihua2, Yang Yonghui1, Sun Sixiu1, Li Xiaobin2   

  1. 1. Department of Chemistry, Shandong University, Jinan;
    2. Department of Metallurgy, Central South University of Technology, Changsha 410083
  • Received:1996-03-13 Revised:1996-06-17 Published:1996-12-10 Online:1996-12-10

摘要: 用生长液滴法研究了HDEHP在盐酸介质中萃取Ga(Ⅲ)的动力学,结果表明,萃取反应速率取决于发生在界面区域内两步连续反应Ga3++Ai-=GaAi2+ GaAi2++Ai-=GaA2i+ 研究了阴离子表面活性剂SDS、ABS对HDEHP萃取Ga(Ⅲ)的影响,二者均不改变HDEHP萃取Ga(Ⅲ)的分配比,但使其正向萃取初始速率降低,原因是表面活性剂与萃取剂在界面上发生了竞争吸附;其次是表面活性剂的加入导致了界面膜上分子排列更致密和界面膜增厚,产生了更大的传质阻力。

关键词: HDEHP, 萃取动力学, Ga, 界面

Abstract: The forward initial extraction rate of gallium(Ⅲ) with HDEHP has been measured by means of growing drop method at 298±1 K.The experimental results indicate that the rate-determining step of the extraction process is controlled by interfacial reactions Ga3++Ai-=GaAi2+ GaAi2++Ai-=GaA2i+ The addition of anionic surfactant(SDS,ABS) has no effect on the distribution ratio,but decreases the forward initial rate of extraction.Firstly,it is caused by the competitive adsorption of HDEHP,SDS and ABS on the interface.Secondly,surfactants bring about close molecular arrangement in the interfacial membrane and the thickening of membrane,producing greater mass transport resistance than in the absence of surfactants.

Key words: HDEHP, extraction kinetics, gallium, interface