Chinese Journal of Applied Chemistry ›› 2023, Vol. 40 ›› Issue (4): 476-485.DOI: 10.19894/j.issn.1000-0518.220287

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Research Progress on Preparation of SiC Ceramic Powders by Atmospheric High Temperature Solid Phase Reaction

Xiao-Lin LAN1(), Hong-Xing ZHENG2(), Yi-Fan ZHANG1, Zhen ZHAO3, He-Ye XIAO4, Zhi-Jiang WANG, Peng-Yang DENG1   

  1. 1.CAS Key Laboratory of High-Perfomance Synthetic Rubber and Its Composite Materials,Changchun Institute of Applied Chemistry,Chinese Academy of Sciences,Changchun 130022,China
    2.Xi'an Modern Control Technology Research Institute,Xi'an 710065,China
    3.Airborne Military Representative Office in Changchun,Changchun 130022,China
    4.Unmanned System Research Institute,Northwestern Polytechnical University,Xi'an 710072,China
    5.School of Chemical Engineering Chemistry,Harbin Institute of Technology,Harbin 150001,China
    6.Inner Mongolia Haite Hualai Technology Co. ,LTD,Hohhot 010000,China
    7.University of Science and Technology of China,Hefei 230026,China
  • Received:2022-08-30 Accepted:2023-01-06 Published:2023-04-01 Online:2023-04-17
  • Contact: Xiao-Lin LAN,Hong-Xing ZHENG
  • About author:zhx203@126.com
    lanxiaolin@ciac.ac.cn
  • Supported by:
    the Youth Innovation Promotion Association CAS(E2202005)

Abstract:

The purity, microstructure and uniformity of ceramic powders will affect the final performance of ceramic products. Therefore, achieving the controlled synthesis of SiC powders is the current research focus of silicon carbide preparation. Herein, SiC is used as the main material to summarize its main preparation methods. Under the normal pressure sintering system, the specific effects of temperature, raw materials, catalysts, gas supersaturation and other factors on SiC products are discussed based on the growth mechanism of Vapor-Liquid-Solid (VLS) mechanism and the Vapor-Solid (VS) mechanism. The controllable synthesis of SiC ceramic powder has important theoretical value and guiding significance for the large-scale production, application and subsequent preparation of ceramic products.

Key words: Silicon carbide, Particles, Nanowires, Growth mechanism, Influencing factors

CLC Number: