Chinese Journal of Applied Chemistry ›› 1997, Vol. 0 ›› Issue (2): 20-23.

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Electrochemical Preparation of Ni Pd Film on p-type Silicon and Its Characterization

Zhang Guoqing1, Liu Bing1, Yao Suwei1, Guo Hetong1, Gong Zhenglie2   

  1. 1. Department of Applied Chemistry, Tianjin University, Tianjin 300072;
    2. Tianjin Institute of Technology, Tianjin
  • Received:1996-06-20 Revised:1996-11-25 Published:1997-04-10 Online:1997-04-10

Abstract: Nickel palladium alloy film was prepared on p type silicon using potential controlled electrodeposition. Cathodic deposition and anodic stripping behavior were investigated as well. The influence of polarization style on the composition, thickness, morphology and structure of film was studied by means of energy dispersive X-ray analysis, X-ray diffraction(XRD)and scanning electron microscope(SEM). SEM showed that at the initial stage nickel palladium forms a layered structure, with the film growing and the polarization enhanced, an island growth was found. XRD indicated that nickel palladium alloy has a face-centered cubic structure and the distance between crystal planes changes with the composition of deposit.

Key words: nickel-palladium alloy, electrodeposition, p-type silicon