Abstract: Dysprosium and ytterbium monophosphides were prepared by solid state reaction. Their crystal structure, energy gaps, resistivitY and Hall coefficient were investigated by x-ray powder diffraction, absorption spectromotry, four-probe and Van de Pauw method. The monophosphides were found to be N-type semiconductor with energy gaps of 1.15eV for DyP and 1.30eV for YbP, resistivities 10^-2Ω-cm, carrier concentrations of 10¹⁸-10¹⁹cm^-3 and corresponding Hall mobilities of 8.5-80cm²/v.s. The p-n junction is formed on DYP/Si and YbP/Si and it shows a rcctifYing character. Possible energy band schemes are Proposed which well explain the optical and electrical ProPerties of the compounds.

Key words: Dysprosium PhosPhide, Ytterbium PhosPhide, Crystal structure, AbsorPtion spectrometry, Electrical Property