应用化学 ›› 1988, Vol. 0 ›› Issue (3): 39-42.

• 研究论文 • 上一篇    下一篇

磷化镝与磷化镱的光学性质和电学性质

任玉芳, 孟建   

  1. 中国科学院长春应用化学研究所
  • 收稿日期:1987-03-03 修回日期:1987-10-06 出版日期:1988-06-10 发布日期:1988-06-10

ON THE OPTICAL AND ELECTRICAL PROPERTIES OF DYSPROSIUM AND YTTERBIUM MONOPHOSPHIDES

Ren Yufang, Mcng Jian   

  1. Changchun Institute of Applied Chemfstry, Academia Sinica
  • Received:1987-03-03 Revised:1987-10-06 Published:1988-06-10 Online:1988-06-10

摘要: 用X射线衍射法确定了DyP和YbP的晶体结构,研究了它们的吸收光谱.得出其禁带宽度分别为1.15eV和1.30eV,电阻率为~10-2Ω-cm,载流子浓度约1018~1019cm-3,霍尔迁移率8.5-80cm2/V·s.它们与P型Si有明显的整流效应,表明形成了DyP/Si和YbP/Si异质结.文中提出了它们的可能能带图,解释了它们的光学性质和电学性质.

关键词: 磷化镝, 磷化镱, 晶体结构, 吸收光谱, 电学性质

Abstract: Dysprosium and ytterbium monophosphides were prepared by solid state reaction. Their crystal structure, energy gaps, resistivitY and Hall coefficient were investigated by x-ray powder diffraction, absorption spectromotry, four-probe and Van de Pauw method. The monophosphides were found to be N-type semiconductor with energy gaps of 1.15eV for DyP and 1.30eV for YbP, resistivities 10-2Ω-cm, carrier concentrations of 1018-1019cm-3 and corresponding Hall mobilities of 8.5-80cm2/v.s. The p-n junction is formed on DYP/Si and YbP/Si and it shows a rcctifYing character. Possible energy band schemes are Proposed which well explain the optical and electrical ProPerties of the compounds.

Key words: Dysprosium PhosPhide, Ytterbium PhosPhide, Crystal structure, AbsorPtion spectrometry, Electrical Property