中华医学超声杂志

应用化学 ›› 1997, Vol. 0 ›› Issue (1): 33-36.

• 研究论文 • 上一篇    下一篇

半导体硅上激光诱导选择性电镀铜

张国庆1, 姚素薇1, 刘冰1, 郭鹤桐1, 龚正烈2   

  1. 1. 天津大学应用化学系 天津 300072;
    2. 天津理工学院 天津
  • 收稿日期:1996-02-16 修回日期:1996-10-22 出版日期:1997-02-10 发布日期:1997-02-10
  • 基金资助:
    国家自然科学基金

Laser-Induced Selective Electroplating of Copper on Semiconductor Silicon

Zhang Guoqing1, Yao Suwei1, Liu Bing1, Guo Hetong1, Gong Zhenglie2   

  1. 1. Department of Applied Chemistry, Tianjin University, Tianjin 300072;
    2. Tianjin Institute of Technology, Tianjin
  • Received:1996-02-16 Revised:1996-10-22 Published:1997-02-10 Online:1997-02-10

PDF

621

被引次数

8 | 4

摘要： 在p型硅上利用氩离子激光进行了选择性电镀铜的研究,考察了半导体表面处理条件、阴极偏压和激光强度对阴极光电流及空间选择性的影响。表面氧化膜和阳极钝化膜的存在使光电流降低近一个数量级,少量氧化膜可使选择性提高。外加阴极偏压和激光强度的增加导致光电流增大,选择性降低。将氢氟酸处理的硅片在电解液中放置10～20min,于稳定电位附近,用较弱激光照射可获得选择性铜镀层

关键词: p－Si, 激光诱导电镀, 选择性, 镀铜

Abstract: Ar+ laser-induced selective electroplating of copper on p-type silicon was studied in the present paper. Influences of surface oxide film, cathodic voltage as well as the laser power on the cathodic photocurrent and selectivity of plating were investigated. The results show that both native film and anodic passive film existed on silicon can reduce the photocurrent by one order of magnitude; however, a small amount of oxide film can improve the selectivity of deposition. When cathodic bias voltage and laser power are increased, the photocurrent is enhanced and the selectivity reduced. By utilizing weaker laser beam, selective copper deposit can be obtained on p-silicon which has been etched in 1:1 HF acid and then laid in the bath for 10～20 min preliminarily.

Key words: p-type silicon, laser induced electroplating, selectivity, copper plating

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