中华医学超声杂志

应用化学 ›› 1996, Vol. 0 ›› Issue (2): 11-14.

• 研究论文 • 上一篇    下一篇

p－Si上电沉积Ni－W合金薄膜

郭永1,3, 张国庆1, 姚素薇1, 郭鹤桐1, 龚正烈2   

  1. 1. 天津大学应用化学系 天津 300072;
    2. 天津理工学院 天津;
    3. 山西雁北师范学院
  • 收稿日期:1995-06-24 修回日期:1995-10-20 出版日期:1996-04-10 发布日期:1996-04-10
  • 基金资助:
    国家自然科学基金

The Electrodeposition of Nickel-Tungsten Films on p-type silicon

Guo Yong1,3, Zhang Guoqing1, Yao Suwei1, Guo Hetong1, Gong Zhenglie2   

  1. 1. Department of Applied Chmistry, Tianjin University, Tianjin 300072;
    2. Tianjin Institute of Technofogy, Tianjin
  • Received:1995-06-24 Revised:1995-10-20 Published:1996-04-10 Online:1996-04-10

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摘要： 利用恒电流沉积法,在p-Si上制备出不同W含量和不同结构的Ni-W薄膜,研究了镀液温度,pH值,电流密度对镀层组成的影响,结果表明,提高温度有利于获得高W含量的合金。随着镀层中W含量的增加,Ni面心立方晶格f.c.c发生正畸变,晶粒平均尺寸变小,当W含量达到56%以上时,晶粒小于2nm,薄膜呈非晶态结构。

关键词: p－Si, Ni－W合金, 电沉积, 非晶

Abstract: Nickel-tungsten films with different content of W and different structure were prepared by means of galvanostatic electrodeposition. The influence of temperature, pH value and current density on the composition of deposits was investigated. Experimental results showed that a rise in temperature is favorable to the increase of W content. X-ray diffraction was used to determine the film structure. With increase of W content. the f. c. c lattice of nickel is distorted, and the average size of grains becomes smaller. When the content of W in deposits reaches to about 56%, the size of grains decreases to below 2 nm and the film has an amorphous structure.

Key words: p-type silicon, nickel-tungsten alloy, electrodeposition, amorphous state

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