中华医学超声杂志

应用化学 ›› 1994, Vol. 0 ›› Issue (6): 45-48.

• 研究论文 • 上一篇    下一篇

半导体氧化锡粉末直流电阻的测定

徐丽金   

  1. 南昌大学化工系 南昌 330029
  • 收稿日期:1994-02-07 修回日期:1994-05-09 出版日期:1994-12-10 发布日期:1994-12-10

DC Resistance Determination on Semiconducting Tin Oxide Powder

Xu Lijin   

  1. Department of Chemical Engineering, Nanchang University, Nanchang 330029
  • Received:1994-02-07 Revised:1994-05-09 Published:1994-12-10 Online:1994-12-10

PDF

412

被引次数

2

摘要： 粒径为0.02～10μm的半导体氧化锡粉末在真空中充分脱气和施加高于40MPa压力可获得重现性较好的直流电阻。无锑掺杂氧化锡粉末的直流电阻随试样冷却吸附的温度而异,讨论了多晶氧化锡粉末的结构对电阻测定的影响。

关键词: 氧化锡粉末, 直流电阻, 测定

Abstract: The semiconducting SnO2 powder sized in 0.02～10μm was degassed completely in high vaccum and pressurized at above 40MPa to give repeatable values of d.c. resistance. For SnO2 undoped by Sb the d.c. resistance values obtained were changed with the cooling process used. The results have been discussed in terms of the structure of the polycrystalline of SnO2.

Key words: tin oxide powder, d.c. resistance, determination

网站版权 © 应用化学     本网站备案：吉ICP备12000082号