应用化学 ›› 1988, Vol. 0 ›› Issue (1): 85-87.

• 研究简报 • 上一篇    下一篇

氧化锡多晶电导的氧空位控制模型

何敬文, 刘斌, 王中纪   

  1. 中国科学院长春应用化学研究所
  • 收稿日期:1987-02-16 修回日期:1987-05-29 出版日期:1988-02-10 发布日期:1988-02-10

OXYGEN VACANCY DOMINATION MODEL FOR ELECTRICAL CONDUCTIVITY OF POLYCRYSTALLINE TIN OXIDE

He Jingwen, Liu Bin, Wang Zhongji   

  1. Changchun Institute of Applied Chemistry, Academia Sinica
  • Received:1987-02-16 Revised:1987-05-29 Published:1988-02-10 Online:1988-02-10

摘要: SnO2、ZnO等金属氧化物的气敏特性通常以它们在不同气氛中电导值的变化来体现.为弄清这类多晶材料及气敏元件电导变化的基本规律,本文根据表面势垒控制模型和晶界势垒控制模型讨论了氧空位密度对SnO2多晶材料及气敏元件电导值的重要影响,并根据SnO2多晶电导的氧空位控制模型,讨论了在不同烧结条件下元件电导的变化规律,并用X光电子能谱(XPS)对结果进行了分析.

关键词: 氧化锡, 气敏材料, 多晶, 电导

Abstract: By analysing the relationship between the density of oxygen vacancies and the surface potential barrier of SnO2 grain, the effects of the oxygen vacancy density on the electrical conductivity of tin oxide gas sensors, as well as the process of production and recombination of the oxygen vacancies, an oxygen vacancy domination model for electrical conductivity of polyerystalline tin oxide is established. The model explaines the changes in electrical conductivity of the sensors under different sintering conditions. It has been verified by X-ray photoemission spectroscopy measurements.

Key words: Tin oxide, Gas sensitive devices, Multicrystalline, Electrical conductivity