Chinese Journal of Applied Chemistry ›› 2023, Vol. 40 ›› Issue (11): 1457-1474.DOI: 10.19894/j.issn.1000-0518.230106
Wang SU, Quan-Li HU(), Jing-Hai LIU()
Received:
2023-04-14
Accepted:
2023-08-18
Published:
2023-11-01
Online:
2023-12-01
Contact:
Quan-Li HU,Jing-Hai LIU
About author:
jhliu2008@sinano.ac.cnSupported by:
CLC Number:
Wang SU, Quan-Li HU, Jing-Hai LIU. Research Progress on Rare Earth-Based Oxide Memristor[J]. Chinese Journal of Applied Chemistry, 2023, 40(11): 1457-1474.
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URL: http://yyhx.ciac.jl.cn/EN/10.19894/j.issn.1000-0518.230106
Fig.5 (A) The depth profiles of Ce, Ti, O and N[16]; (B) The atomic ratios of O/Ce and Ti/N for CeO x /TiN stacked film[16];(C) Schematic configuration of SDC∶SrTiO3 (STO) vertical heteroepitaxial nanocomposite(VHN) device[31]; (D) Electroforming-free R-V hysteresis loops in SDC∶STO VHN device[31]
Fig.6 (A) Retention for long-term memory stability after repeated pulsing +10 V for 10 ms[32]; (B) I-V curves as repeating voltage sweep of 0→+5→0 V five times first, and 0→-5→0 V five times second, and then finally 0→+5→0 V once at the temperature of 300 and 380 K[33]; I-V curves of (C) Pt/CeO2/Pt reference device during five repeated voltage sweeps of 0→+5→0 V and five successive sweeps of 0→-?5→0 V and (D) Pt/ITO/CeO2/Pt during ten repeated voltage sweeps of 0→+8→0 V and ten successive sweeps of 0→-4→0 V[34]
Fig.7 Bipolar switching curves of the neodymium oxide thin films for (A) 40% and (B) 60% (volume fraction) oxygen concentration parameters[18]; XPS (C) Nd3d states and (D) O1s states[38]
Fig.8 (A) The endurance of the Pt/SGO/Pt ReRAM device over 120 cycles with different ICC; (B) The retention characteristic of different resistance states for the device[40]
Fig.9 (A) The relaxation process of STP with respect to time and this is analogous to human-memory “forgetting process”, inset shows a schematic illustration of synapses[41]; (B) Normalized O1s, Y3p and Hf4d XPS spectra for the YDH thin film[42]; (C) Optical image of a fabricated flexible ITO/Y2O3/Ag RRAM device, inset shows a schematic of the fabricated devices[43]; (D) Representative I-V curve in the log scale, inset shows an I-V curve in the linear scale[43]
Fig.10 (A) I-V hysteresis loops of post-annealed devices for difference voltage and current conditions[48]; (B) I-V curves of resistive switching behavior in the Ru/RE2O3/TaN RRAM devices using Tm2O3,Yb2O3 and Lu2O3 thin films[49]
Structure | Ron/Roff | VSET/V | VRESET/V | Endurance performance | Retention capability | Mechanism | Ref. |
---|---|---|---|---|---|---|---|
Pt/LaFeO3/LaAlO3(100)/LaNiO3 | 1×102 | -4 | +1 | >2×103 | — | VO-CFs | [ |
Au/La0.5Pr0.5FeO3/Pt(111)/Ti/SiO2/Si/Au | 1 | +18 | +28.12 | — | — | Schottkybarrier | [ |
Au/H-dopedNdNiO3/LaAlO3/Pt | ≈1×103 | ≈+0.06 | ≈-0.3 | >1.6×106 | — | — | [ |
Au/BM-SCO/LSM/STO | 15.5 | +1~2 | +1~-2 | — | >3×102 | VO-CFs | [ |
Au/BM-SCO/LSM/LAO | 3.5 | +1~2 | +1~-2 | — | >1×102 | VO-CFs | [ |
Au/Zn-CeO2/Au | 105 | +2.25~0.75 | -1~-2 | 250 | — | VO-CFs | [ |
Au/Ti/Ce1-x Y x O2-y /Pt | ≈1×103 | +0.5 | -1~-2 | 1×102 | 1 Year | VO-CFs | [ |
Au/Ce0.9Y0.1O2/TiO2/Pt(1R1S) | 2.8×103 | +4~+8 | -4~-8 | — | — | Schottkybarrier | [ |
Pt/HfO2∶CeO2/STO | 10~1×102 | 0~-1 | -4~-6 | — | — | VO-CFs | [ |
Ag/CeO2/Pt | ≈4.3 | <+0.2 | <-0.4 | 1×102 | >5×104 s | Ag-CFs | [ |
Pt/CeO2/Pt | 10 | <+1 | <-1 | >30 | >4.8×103 s | Schottkybarrier | [ |
Pt/Ti-EL/Dy2O3/Pt | 1×106 | +0.54 | +0.2 | 1×103 | >1×106 s | VO-CFs | [ |
Cu/Pt-nc/Dy2O3/Pt | 1×104 | +1.2 | +0.42 | 1×103 | >1×105 s, | VO-CFs | [ |
Pt/DyMn2O5/TiN | 1×102 | +1~+2 | -1~-2 | 1×102 | >1×104 s | VO-CFs | [ |
Ag/Er2O3/ITO | 7 | +1.95 | -3.63 | >250 | >2×104 s | VO-CFs | [ |
Pt/Gd2O3/Pt | 1×106~1×107 | ≈+0.6 | — | >60 | >10 Year | VO-CFs | [ |
IrO x /GdO x /Al2O3/TiN | 7 | +1.65/-2.43 | +3/-3.6 | >1×103 | — | VO-CFs | [ |
TiN/Hf/Gd-O/TiN | >1×103 | <+2 | <+2 | 1×109 | >1×1010 s | — | [ |
Au/Pr-CeO2/FTO | ≈2×103 | +0.5 | — | 1×103 | — | VO-CFs | [ |
Pt/PCMO/TiN | — | -1.25 | +1.3 | — | — | [ | |
Ni/Sm2O3/ITO | >1×103 | <+0.3 | <+0.7 | >1×104 | >1×105 s | Schottkybarrier | [ |
Pt/YMn1-δ O3/Pt | 1×105 | +2.2~+10 | +0.6~+1.3 | 10 | >1×105 s | VO-CFs | [ |
Pt/YCrO3(YCO)/Pt | 1×105 | +3.5 | +0.8 | 1×102 | 1×103 s | VO-CFs | [ |
TiN/Y2O3/Pt | 1×102 | -1 | +0.97 | 8×102 | >1×108 | — | [ |
n-Si/Y2O3/Al | ≈3~5 | +2~+4 | -2~-4 | >7×103 | 1×103 | Schottkybarrier | [ |
AL/Y2O3/GZO/Y2O3/SI | ≈10 | +3 | -3 | — | — | VO-CFs | [ |
ITO/Y2O3/Ag | 1×104~1×105 | <+2.5 | >-5 | 1.8×105 | 1×104 s | CFs | [ |
GZO/Y2O3/Al | 2×102 | +1.8 | -1.93 | 7×105 | 1.5×105 s | — | [ |
Au/Zr/YSZ/TiN/Ti | ≈1×104 | ±0.7 | ±1.1 | 1×103 | — | CFs | [ |
TiN/CeO x /ZnO/ITO/Mica | — | — | — | — | — | CFs | [ |
Ag/CeO2/SiO2/Pt | ≈1× | +0.08~+0.34 | >1×103 | — | [ |
Table 1 Summary of rare earth based memristor
Structure | Ron/Roff | VSET/V | VRESET/V | Endurance performance | Retention capability | Mechanism | Ref. |
---|---|---|---|---|---|---|---|
Pt/LaFeO3/LaAlO3(100)/LaNiO3 | 1×102 | -4 | +1 | >2×103 | — | VO-CFs | [ |
Au/La0.5Pr0.5FeO3/Pt(111)/Ti/SiO2/Si/Au | 1 | +18 | +28.12 | — | — | Schottkybarrier | [ |
Au/H-dopedNdNiO3/LaAlO3/Pt | ≈1×103 | ≈+0.06 | ≈-0.3 | >1.6×106 | — | — | [ |
Au/BM-SCO/LSM/STO | 15.5 | +1~2 | +1~-2 | — | >3×102 | VO-CFs | [ |
Au/BM-SCO/LSM/LAO | 3.5 | +1~2 | +1~-2 | — | >1×102 | VO-CFs | [ |
Au/Zn-CeO2/Au | 105 | +2.25~0.75 | -1~-2 | 250 | — | VO-CFs | [ |
Au/Ti/Ce1-x Y x O2-y /Pt | ≈1×103 | +0.5 | -1~-2 | 1×102 | 1 Year | VO-CFs | [ |
Au/Ce0.9Y0.1O2/TiO2/Pt(1R1S) | 2.8×103 | +4~+8 | -4~-8 | — | — | Schottkybarrier | [ |
Pt/HfO2∶CeO2/STO | 10~1×102 | 0~-1 | -4~-6 | — | — | VO-CFs | [ |
Ag/CeO2/Pt | ≈4.3 | <+0.2 | <-0.4 | 1×102 | >5×104 s | Ag-CFs | [ |
Pt/CeO2/Pt | 10 | <+1 | <-1 | >30 | >4.8×103 s | Schottkybarrier | [ |
Pt/Ti-EL/Dy2O3/Pt | 1×106 | +0.54 | +0.2 | 1×103 | >1×106 s | VO-CFs | [ |
Cu/Pt-nc/Dy2O3/Pt | 1×104 | +1.2 | +0.42 | 1×103 | >1×105 s, | VO-CFs | [ |
Pt/DyMn2O5/TiN | 1×102 | +1~+2 | -1~-2 | 1×102 | >1×104 s | VO-CFs | [ |
Ag/Er2O3/ITO | 7 | +1.95 | -3.63 | >250 | >2×104 s | VO-CFs | [ |
Pt/Gd2O3/Pt | 1×106~1×107 | ≈+0.6 | — | >60 | >10 Year | VO-CFs | [ |
IrO x /GdO x /Al2O3/TiN | 7 | +1.65/-2.43 | +3/-3.6 | >1×103 | — | VO-CFs | [ |
TiN/Hf/Gd-O/TiN | >1×103 | <+2 | <+2 | 1×109 | >1×1010 s | — | [ |
Au/Pr-CeO2/FTO | ≈2×103 | +0.5 | — | 1×103 | — | VO-CFs | [ |
Pt/PCMO/TiN | — | -1.25 | +1.3 | — | — | [ | |
Ni/Sm2O3/ITO | >1×103 | <+0.3 | <+0.7 | >1×104 | >1×105 s | Schottkybarrier | [ |
Pt/YMn1-δ O3/Pt | 1×105 | +2.2~+10 | +0.6~+1.3 | 10 | >1×105 s | VO-CFs | [ |
Pt/YCrO3(YCO)/Pt | 1×105 | +3.5 | +0.8 | 1×102 | 1×103 s | VO-CFs | [ |
TiN/Y2O3/Pt | 1×102 | -1 | +0.97 | 8×102 | >1×108 | — | [ |
n-Si/Y2O3/Al | ≈3~5 | +2~+4 | -2~-4 | >7×103 | 1×103 | Schottkybarrier | [ |
AL/Y2O3/GZO/Y2O3/SI | ≈10 | +3 | -3 | — | — | VO-CFs | [ |
ITO/Y2O3/Ag | 1×104~1×105 | <+2.5 | >-5 | 1.8×105 | 1×104 s | CFs | [ |
GZO/Y2O3/Al | 2×102 | +1.8 | -1.93 | 7×105 | 1.5×105 s | — | [ |
Au/Zr/YSZ/TiN/Ti | ≈1×104 | ±0.7 | ±1.1 | 1×103 | — | CFs | [ |
TiN/CeO x /ZnO/ITO/Mica | — | — | — | — | — | CFs | [ |
Ag/CeO2/SiO2/Pt | ≈1× | +0.08~+0.34 | >1×103 | — | [ |
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