Abstract: Ar⁺ laser-induced selective electroplating of copper on p-type silicon was studied in the present paper. Influences of surface oxide film, cathodic voltage as well as the laser power on the cathodic photocurrent and selectivity of plating were investigated. The results show that both native film and anodic passive film existed on silicon can reduce the photocurrent by one order of magnitude; however, a small amount of oxide film can improve the selectivity of deposition. When cathodic bias voltage and laser power are increased, the photocurrent is enhanced and the selectivity reduced. By utilizing weaker laser beam, selective copper deposit can be obtained on p-silicon which has been etched in 1:1 HF acid and then laid in the bath for 10～20 min preliminarily.

Key words: p-type silicon, laser induced electroplating, selectivity, copper plating