Synthesis and Application of Guanidinato Silicon Precursors

doi:10.11944/j.issn.1000-0518.2019.10.190050

Chinese Journal of Applied Chemistry ›› 2019, Vol. 36 ›› Issue (10): 1179-1185.DOI: 10.11944/j.issn.1000-0518.2019.10.190050

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Synthesis and Application of Guanidinato Silicon Precursors

MA Xiao^a,XU Chongying^a^*(),XU Dongsheng^b,DING Yuqiang^a,JIN Chenggang^c,JI Peiyu^c

^aSchool of Chemical and Material Engineering,Jiangnan University,Wuxi,Jiangsu 214122,China
^bJiangsu Nata Opto-Electronic Material Co. Ltd.,Suzhou,Jiangsu 215001,China
^c School of Physical Science and Technology,Soochow University,Suzhou,Jiangsu 215006,China

Received:2019-02-26 Accepted:2019-05-05 Published:2019-10-01 Online:2019-09-29
Contact: XU Chongying
Supported by:
Supported by National Science and Technology Major Project Ultra Large-Scale Integrated Circuit Manufacture Complete Set of Equipment and Technology(No.2016ZX02301003-004-004)

Abstract

Abstract:

Three silicon compounds were synthesized by reaction of dimethyldichlorosilane with 1,1,3,3-tetramethylguanidine substituent and lithium amide. The structures of the compounds were verified by ¹H nuclear magnetic resonance (NMR), ¹³C NMR, electron ionization-mass spectrometry (EI-MS), and elemental analysis. The thermal stability and vapor pressures of these compounds were evaluated by thermo gravimetric analysis(TGA). The results show a nearly pure volatilization with low decomposition process and residual(<1%). The highest vapor pressure ranges from 3600 Pa to 5300 Pa, which is suitable for chemical vapor deposition (CVD) precursors. Silicon films were prepared by using dimethyl-guanidinato-ethylmethylamide silane as the precursor in Helicon wave plasma CVD (HWP-CVD). The properties of the films were studied by scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS). The films are composed of Si, N, and C. Guanidinate-based silicon compounds as CVD precursors have potential applications in fabrication of semiconductor devices.

Key words: guanidinate, precursor, chemical vapor deposition, application

MA Xiao, XU Chongying, XU Dongsheng, DING Yuqiang, JIN Chenggang, JI Peiyu. Synthesis and Application of Guanidinato Silicon Precursors[J]. Chinese Journal of Applied Chemistry, 2019, 36(10): 1179-1185.

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Synthesis and Application of Guanidinato Silicon Precursors

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