Chinese Journal of Applied Chemistry ›› 1995, Vol. 0 ›› Issue (1): 5-8.
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Wang Baohui1, Wang Dejun1, Li Tiejin1, Geng Xinhua2, Lin Shiguo2, Sun Yun2, Sun Zhonglin2
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Abstract: lmplantation of Li+ ions into hydrogenated amorphous silicon(a-Si:H)film underinducement of electric field has been investigated by photoelectrochemical teehnique and sur-face photovoltaic spectroscopy(SPS).The results show that implantation could take placeunder less tl1an-0.60V(vs.SCE)in a-Si:Hfilm. The photovoItaic response of the implant-ed film increases by about 60% compared with that of the non-implanted film.
Key words: hydrogenated amorphous silicon film, Li+ ion implantation, ohotovoltage re-sponse
Wang Baohui, Wang Dejun, Li Tiejin, Geng Xinhua, Lin Shiguo, Sun Yun, Sun Zhonglin. Li+Ion Implantation into a-Si:H Film under Inducement of Electric Field and the Photovoltalc Property[J]. Chinese Journal of Applied Chemistry, 1995, 0(1): 5-8.
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