应用化学

• 研究论文 • 上一篇    下一篇

末端功能基团对聚(3-丁基噻吩)光电性能的影响

李思均1,2,王思思1,2,张宝华1,杨小牛1*   

  1. (1.中国科学院长春应用化学研究所 长春 130021;
    2.中国科学院大学 北京 100049)
  • 收稿日期:2013-03-27 修回日期:2013-05-20 出版日期:2014-01-10 发布日期:2014-01-10
  • 通讯作者: 杨小牛,研究员; Tel:0431-85262838; Fax:0431-85262028; E-mail:xnyang@ciac.jl.cn; 研究方向:高分子物理
  • 基金资助:
    国家高技术研究发展计划(863)(2011AA050524),中国科学院太阳能行动计划 (KGCX2-YW-399+9)

Effect of Functional End-Group on Optoelectronic Properties of Poly(3-butylthiophene)

LI Sijun1,2, WANG Sisi1,2, ZHANG Baohua1, YANG Xiaoniu1*   

  1. (1.Changchun Institute of Applied Chemistry,Chinese Academy of Sciences,Changchun 130021,China;
    2.University of Chinese Academy of Sciences,Beijing 100049,China)
  • Received:2013-03-27 Revised:2013-05-20 Published:2014-01-10 Online:2014-01-10
  • Contact: xiaoniu yang

摘要: 研究了4种带有不同末端基团的聚(3-丁基噻吩)(P3BT)的光电性能。 结果表明,末端基团对P3BT的结晶有一定的抑制作用,可以改变P3BT的表面能,从而有效调控P3BT∶PCBM共混体系相容性以及薄膜的形貌,并影响以P3BT为给体材料的聚合物光伏器件的性能。 其中,带有较短烷基链末端基团的烯丙基封端P3BT具有较高的结晶性,与PCBM具有适中的相容性,使得光伏器件的光敏层能够形成理想的微相分离结构,器件效率可以达到3.1%,较传统的溴封端P3BT器件效率提升35%以上。

关键词: 末端基团, 聚(丁基噻吩), 相容性, 光电性能

Abstract: In this work, we systematically studied the optoelectronic properties of four poly(3-butylthiophene)(P3BT) with different functional end-groups. The end-groups were found to be detrimental to the crystallization of P3BT. Nevertheless, the end-groups could modify the surface energy of P3BT and therefore achieve the tunable miscibility and film morphology of P3BT∶PCBM blends. The solar cell devices based on these P3BTs with functional end-groups as donor materials have been fabricated and tested. We demonstrated that the allyl-terminated P3BT has relative higher crystallinity. And the appropriate miscibility of allyl-terminated P3BT and PCBM could lead to an ideal micro phase separation morphology of P3BT∶PCBM in the active layer of solar cell device. The corresponding photovoltaic device performance could reach 3.1% which is 35% higher than that of conventional device using bromide-terminated P3BT.

Key words: end-group, poly(butylthiophene), miscibility, optoelectronic property

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