应用化学 ›› 2023, Vol. 40 ›› Issue (4): 476-485.DOI: 10.19894/j.issn.1000-0518.220287

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常压高温固相反应制备SiC陶瓷粉体的研究进展

兰晓琳1(), 郑红星2(), 张依帆1, 赵振3, 肖和业4, 王志江, 邓鹏飏1   

  1. 1.中国科学院长春应用化学研究所,中国科学院高性能合成橡胶及其复合材料重点实验室,长春 130022
    2.(西安现代控制技术研究院,西安 710065) 3(空装驻长春地区军代室,长春 130022 )
    4.(西北工业大学无人系统技术研究院,西安 710072) 5(哈尔滨工业大学化工与化学学院,哈尔滨 150001 )
    6.内蒙古海特华材科技有限公司,呼和浩特 010000) 7(中国科学技术大学,合肥 230026
  • 收稿日期:2022-08-30 接受日期:2023-01-06 出版日期:2023-04-01 发布日期:2023-04-17
  • 通讯作者: 兰晓琳,郑红星
  • 基金资助:
    中国科学院青年创新促进会(E2202005)

Research Progress on Preparation of SiC Ceramic Powders by Atmospheric High Temperature Solid Phase Reaction

Xiao-Lin LAN1(), Hong-Xing ZHENG2(), Yi-Fan ZHANG1, Zhen ZHAO3, He-Ye XIAO4, Zhi-Jiang WANG, Peng-Yang DENG1   

  1. 1.CAS Key Laboratory of High-Perfomance Synthetic Rubber and Its Composite Materials,Changchun Institute of Applied Chemistry,Chinese Academy of Sciences,Changchun 130022,China
    2.Xi'an Modern Control Technology Research Institute,Xi'an 710065,China
    3.Airborne Military Representative Office in Changchun,Changchun 130022,China
    4.Unmanned System Research Institute,Northwestern Polytechnical University,Xi'an 710072,China
    5.School of Chemical Engineering Chemistry,Harbin Institute of Technology,Harbin 150001,China
    6.Inner Mongolia Haite Hualai Technology Co. ,LTD,Hohhot 010000,China
    7.University of Science and Technology of China,Hefei 230026,China
  • Received:2022-08-30 Accepted:2023-01-06 Published:2023-04-01 Online:2023-04-17
  • Contact: Xiao-Lin LAN,Hong-Xing ZHENG
  • About author:zhx203@126.com
    lanxiaolin@ciac.ac.cn
  • Supported by:
    the Youth Innovation Promotion Association CAS(E2202005)

摘要:

陶瓷粉体的纯度、微观形貌和均匀度等性质会影响陶瓷产品的最终性能,因此实现碳化硅粉体材料的可控合成是目前碳化硅材料制备领域的研究重点。本文以碳化硅材料为主体,综述了目前碳化硅生产的主要方法。重点结合常压高温固相反应体系下,基于气-液-固(VLS)机制以及气-固(VS)机制生长机理探讨了温度、原料、催化剂、气体过饱和度等因素对碳化硅陶瓷粉体制备过程中的具体影响。实现碳化硅陶瓷粉体的可控合成对碳化硅材料规模化生产、应用及后续制备陶瓷产品具有重要的理论价值和指导意义。

关键词: 碳化硅, 颗粒, 纳米线, 生长机理, 影响因素

Abstract:

The purity, microstructure and uniformity of ceramic powders will affect the final performance of ceramic products. Therefore, achieving the controlled synthesis of SiC powders is the current research focus of silicon carbide preparation. Herein, SiC is used as the main material to summarize its main preparation methods. Under the normal pressure sintering system, the specific effects of temperature, raw materials, catalysts, gas supersaturation and other factors on SiC products are discussed based on the growth mechanism of Vapor-Liquid-Solid (VLS) mechanism and the Vapor-Solid (VS) mechanism. The controllable synthesis of SiC ceramic powder has important theoretical value and guiding significance for the large-scale production, application and subsequent preparation of ceramic products.

Key words: Silicon carbide, Particles, Nanowires, Growth mechanism, Influencing factors

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