应用化学 ›› 2016, Vol. 33 ›› Issue (8): 855-866.DOI: 10.11944/j.issn.1000-0518.2016.08.160240

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在发光二极管背光源上极具应用前景的Beta-sialon (Si6-zAlzOzN8-z):Eu2+窄带绿色荧光粉

解荣军ab*,周天亮a,高桥向星b,广崎尚登b   

  1. a 厦门大学 材料学院 厦门 361005
    b 日本国立材料研究所 日本 筑波305-0044
  • 收稿日期:2016-06-07 接受日期:2016-06-23 出版日期:2016-07-21 发布日期:2016-07-21
  • 通讯作者: 解荣军
  • 基金资助:
    国家自然科学基金(51572232,51561135015)宁波市重大科技攻关项目(2011B1001)资助

Beta-Sialon(Si6-zAlzOzN8-z):Eu2+:A Promising Narrow-band Green Phosphor for Light-emitting Diode Backlights

XIE Rongjunab*,ZHOU Tianlianga,TAKAHAHIS Koheib,HIROSAKI Naotob   

  1. a College of Materials,Xiamen University,Xiamen,Fujian 316005,China
    b Sialon Group,National Institute for Materials Science,Tsukuba,Ibaraki 305-0044,Japan
  • Received:2016-06-07 Accepted:2016-06-23 Published:2016-07-21 Online:2016-07-21
  • Contact: XIE Rongjun
  • Supported by:
    Supported by the National Natural Science Foundation of China(No.51572232, No.51561135015), Key Technology Research and Development Program of Ningbo(No.2011B1001)

摘要:

基于氮化镓的白光发光二极管(LED)是目前一项崭新的背光源技术,广泛应用于宽色域、高光效的液晶显示屏。 在此项技术中,作为关键材料的荧光粉决定着背光单元的色域范围、发光效率和可靠性,因而要求它应具合适的发射波长和窄带发射。 β-sialon:Eu2+(sialon:silicon aluminum oxynitride(赛龙))就是一款非常适合背光应用的绿色荧光粉,这得益于其位于525~545 nm发射峰和只有55 nm狭窄的峰宽。 此文回顾和综述了β-sialon:Eu2+的合成方法、光谱特性、电子结构、晶体结构、可靠性和它的具体应用。 计算模拟和实验测试结果表明,Eu2+位于沿c轴方向的大孔道之中,并与6个最紧邻的(O,N)原子等距离配位。 因而,Eu2+的狭窄发射峰源自于Eu2+局域结构的高度对称性。 β-sialon:Eu2+的发射波长和带宽都能通过组成裁剪,即z值,进行调控;低z值组成能够实现更短波长发射和更窄带宽。 与传统的基于钇铝石榴石(YAG)荧光粉的背光源相比,β-sialon:Eu2+再搭配红色荧光粉制备的背光源具有更宽的色域,色域范围可提高15%以上。 其优异的发光性能和高可靠性使得β-sialon:Eu2+成为应用于先进显示屏的极其重要的绿色发光材料。

关键词: 稀土, 氮化物, beta-sialon:Eu2+, 荧光粉, 电子结构, 发光二极管, 背光源

Abstract:

GaN-based white light-emitting diode(LED) is now an emerging backlight technology for large color gamut and high efficiency liquid crystal displays. In this technology, phosphors are key materials to control the color-space coverage, luminous efficiency, and lifetime of the backlight units, which are required to have a desired emission and a narrow emission band. β-Sialon:Eu2+(sialon:silicon aluminum oxynitride, Si6-zAlzOzN8-z) is such a green phosphor because it has an emission band centered at 525~545 nm and a small band width(~55 nm). This contribution overviews the synthesis, luminescence, electronic and crystal structure, reliability and applications of β-sialon:Eu2+. From both structure calculations and experimental observations, Eu2+ is seen to be accommodated into a large void along the c-axis, and coordinated to six nitrogen/oxygen atoms at an equivalent distance. The narrow emission band is thus ascribed to the high symmetry of the local structure of Eu2+. Both of the emission band and the band width of β-sialon:Eu2+ can be tuned by tailoring the composition(e.g., the z value), and β-sialon:Eu2+ with shorter wavelengths and narrower bands can be achieved at lower z values. Combined with other red phosphors, β-sialon:Eu2+ enables to produce wider color gamut backlights(15% up) than the conventional yttrium aluminum garnet(YAG)-based ones. Both the excellent luminescence properties and reliability make β-sialon:Eu2+ to be an extremely important green phosphor for use in advanced displays.

Key words: rare earth, nitride, beta-sialon:Eu2+, phosphor, electronic structure, light-emitting diode, backlighting