氢化非晶硅薄膜的电场诱导锂离子注入及其光伏特性

摘要/Abstract

摘要： 采用电化学方法,在电场诱导下,对氢化非晶硅(a-Si:H)薄膜进行锂离子注入,并用光电化学方法对不同条件下处理的a-Si:H薄膜的光伏性质和注入机理进行了研究.结果表明,处理电位小于-0.60V时,理离子注入明显,经过注入的薄膜光伏响应提高60%左右.

关键词: 非晶硅薄膜, 锂离子注入, 光伏响应

Abstract: lmplantation of Li⁺ ions into hydrogenated amorphous silicon(a-Si:H)film underinducement of electric field has been investigated by photoelectrochemical teehnique and sur-face photovoltaic spectroscopy(SPS).The results show that implantation could take placeunder less tl1an-0.60V(vs.SCE)in a-Si:Hfilm. The photovoItaic response of the implant-ed film increases by about 60% compared with that of the non-implanted film.

Key words: hydrogenated amorphous silicon film, Li⁺ ion implantation, ohotovoltage re-sponse

王宝辉, 王德军, 李铁津, 耿新华, 刘世国, 孙云, 孙钟林. 氢化非晶硅薄膜的电场诱导锂离子注入及其光伏特性[J]. 应用化学, 1995, 0(1): 5-8.

Wang Baohui, Wang Dejun, Li Tiejin, Geng Xinhua, Lin Shiguo, Sun Yun, Sun Zhonglin. Li⁺Ion Implantation into a-Si:H Film under Inducement of Electric Field and the Photovoltalc Property[J]. Chinese Journal of Applied Chemistry, 1995, 0(1): 5-8.