中华医学超声杂志

应用化学 ›› 1994, Vol. 0 ›› Issue (4): 1-7.

• 研究论文 •    下一篇

多孔硅研究进展

刁鹏1, 蔡生民1, 李经建1, 陈泳1, 张树霖2   

  1. 1. 北京大学化学系 北京 100871;
    2. 北京大学物理系 北京
  • 收稿日期:1993-12-27 修回日期:1994-03-31 出版日期:1994-08-10 发布日期:1994-08-10
  • 基金资助:
    国家自然科学基金资助项目

Recent Progroess of Research on Porous Silicon

Diao Peng1, Cai Shengmin1, Li Jingjian1, Chen Yong1, Zhang Shulin2   

  1. 1. Department of Chemistry, Peking University, Beijing 100871;
    2. Department of Physics, Peking University, Beijing
  • Received:1993-12-27 Revised:1994-03-31 Published:1994-08-10 Online:1994-08-10

PDF

482

被引次数

9

摘要： 综述多孔硅的形成规律,介绍其各种物理、化学特性和形成机制等,并以多孔硅电致光发射器件的研制为主,讨论它的应用技术。

关键词: 多孔硅, 形成, 物理性质, 应用, 综述

Abstract: Porous silicon (PS) is a kind of new material which has great potential applications in developing super large scale integrated circuits and all silicon optointergrated circuits, In this paper, different formation conditions of PS are reviewed,and the latest developments of the research on its physical and chemical properties and formation mechanism are presented.Applications in manufacturing PS Iight emitting devices and other fields are discussed.

Key words: porous silicon, fortmation, physical property, application, review

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