应用化学 ›› 1990, Vol. 0 ›› Issue (1): 86-87.

• 研究简报 • 上一篇    下一篇

多晶Hg0.09Cd0.91Te薄膜的光电化学行为

李军, 谭正, 糜天英   

  1. 中国科学院长春应用化学研究所 长春 130022
  • 收稿日期:1989-01-23 修回日期:1989-07-03 出版日期:1990-02-10 发布日期:1990-02-10

PHOTOELECTROCHEMICAL BEHAVIOR OF POLYCRY STALLINE Hg0.09Cd0.91Te FILM

Li Jun, Tan Zheng, Mi Tianying   

  1. Changchun Institute of Applied Chemistry, Academia Sinica, Changchun 130022
  • Received:1989-01-23 Revised:1989-07-03 Published:1990-02-10 Online:1990-02-10

摘要: 富镉Hg1-xCdxTe是一种新型的光电转换材料[1],已用于固体结太阳能光伏电池:ITO/CdS/Hg1-CdxTe/Au。我们曾对Hg1-xCdxTe的电沉积机理作过研究。最近我们用电沉积制备的Hg0.09Cd0.91Te多晶薄膜做成了液体结太阳能光电化学电池并观察到明显光电响应。

关键词: 光电化学, 多晶薄膜, 鍗镉汞

Abstract: Cd-rich polycrystalline Hg1-xCdx.Te was electrodeposited on a Ti substrate from anacidic solution(pH=1.0)of mixture of 0.2mol/L CdSO4, 5?10-4mol/L TeO2 and 1.13?10-5 mol/L HgCl2. The film has a cubic structure with preferential orientation in(111).Thevalue of 1-x in Hg1-xCdxTe was determined by EDAX to be 0.09. The photoelectro-chemical cell has a solar energy conversion efficiency of about 0.43% under AM1. 5 illu-mination in a polysulfide redox solution(1.0mol/L Na2S+0.2mol/L S+1.0mol/L NaOH).The bandgap of Hg0.09Cd0.91Te was about 1.26eV.

Key words: Photoelectrochemistry, polycrystalline thin film, mercury cadmium telluride