Chinese Journal of Applied Chemistry ›› 2022, Vol. 39 ›› Issue (10): 1579-1585.DOI: 10.19894/j.issn.1000-0518.210562

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Application of Polyether Amines in Copper Barrier Chemical Mechanical Polishing Slurry

Lin LIU1(), Hua-Feng HE1,2()   

  1. 1.School of Materials Science and Engineering,Tongji University,Shanghai 200092,China
    2.Anji Microelectronics (Shanghai) Co. ,Ltd. ,Shanghai 201203,China

Abstract:

The low-k dielectric materials with their low mechanical strength and high porosity for advanced IC processes pose great challenges in barrier CMP slurries, requiring favorable advantages in high removal rate, adjustability, lower surface defects and improved edge over erosion (EOE). In this paper, the effects of polyether amines on the removal rate and defects toward low-k materials are studied. The results show that the removal rate of low-k material decreases by 68%~85%, the number of residual particles on the surface of low-k material decreases by 80%, and EOE decreases by 2/3, which meets the requirements of advanced technology for barrier CMP slurries.

Key words: Polyether amine, Chemical mechanical polishing, Copper barrier materials

CLC Number: