Recent Progroess of Research on Porous Silicon

Chinese Journal of Applied Chemistry ›› 1994, Vol. 0 ›› Issue (4): 1-7.

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Recent Progroess of Research on Porous Silicon

Diao Peng¹, Cai Shengmin¹, Li Jingjian¹, Chen Yong¹, Zhang Shulin²

1. Department of Chemistry, Peking University, Beijing 100871;
2. Department of Physics, Peking University, Beijing

Received:1993-12-27 Revised:1994-03-31 Published:1994-08-10 Online:1994-08-10

Abstract

Abstract: Porous silicon (PS) is a kind of new material which has great potential applications in developing super large scale integrated circuits and all silicon optointergrated circuits, In this paper, different formation conditions of PS are reviewed,and the latest developments of the research on its physical and chemical properties and formation mechanism are presented.Applications in manufacturing PS Iight emitting devices and other fields are discussed.

Key words: porous silicon, fortmation, physical property, application, review

Diao Peng, Cai Shengmin, Li Jingjian, Chen Yong, Zhang Shulin. Recent Progroess of Research on Porous Silicon[J]. Chinese Journal of Applied Chemistry, 1994, 0(4): 1-7.

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Recent Progroess of Research on Porous Silicon

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