Chinese Journal of Applied Chemistry ›› 1998, Vol. 0 ›› Issue (4): 104-106.
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Cui Qiming1, Jiang Zhiyu1, Yu Zuzhan1, Ying Zhifeng2
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Abstract: The partial deposit films on p-silicon wafers were formed from three kinds of plating solution: chloro-platinic acid, potassium tetranitroplatinate and diammine platinium dinitrate under Nd: YAG laser irradiation.The compositions and properties of the depositswere investigated by AES, SEM and XPS techniques.The Pt deposits have ohmic contactwith p-type silicon.
Key words: platinium plating, laser induced deposition, p-silicon
Cui Qiming, Jiang Zhiyu, Yu Zuzhan, Ying Zhifeng. Laser-Induced Partial Deposition of Pt on p-Silicon Wafers[J]. Chinese Journal of Applied Chemistry, 1998, 0(4): 104-106.
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