Chinese Journal of Applied Chemistry ›› 1992, Vol. 0 ›› Issue (5): 101-103.

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PREPARATION OF TRANSPARENT ELECTRICALLY CONDUCTIVE TEXTURED SnO2 DOPED WITH F FILM(FTO)

Han Wenjun1, Mai Guangxin1, Li Bin1, Wei Peihai1, Chen Youpeng2, Li Shuying2   

  1. 1. Department of Chemistry, Shangdong College of Education, Jinan 250013;
    2. Institute of Photoelectric Materials and Devices, Shandong University
  • Received:1991-10-14 Revised:1992-04-15 Published:1992-10-10 Online:1992-10-10

Abstract: The technological process of textured FTO(SnO2doped with F) film by CVD technique is reported. The optimum conditions for the preparation of textured FTO films of 30×30cm2 with Rsq~10Ω/sq,T~85%, film unevenness<±5% are: Tg=450~50℃, flow rate of ethylene fluoride:0.15~0.30L/min.

Key words: doped tin oxide, semiconductive film, ethylene fluoride chemical vapour deposition