Chinese Journal of Applied Chemistry ›› 1984, Vol. 0 ›› Issue (4): 30-33.

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PHOTOELECTROCHEMICAL CHARACTERISTICS OF p-Si CATHODES COATING WITH THIN METAL FILM IN ALKALINE SOLUTION

Wang shixun, Li Guozheng, Xu Guoxian   

  1. Department of Chemistry, Shandong University, Jinan
  • Received:1984-04-09 Revised:1984-06-19 Published:1984-12-10 Online:1984-12-10

Abstract: Photoelectrochemical characteristics of p-type epitaxial silicon (p+/p-Si)cathodes coating with a thin metal film in alkaline solution have been investigated by cyclic yoltammetric and potentiostatic method. It turns out that the p+/p-Si cathodes coating with tungsten-nickel alloy and with palladium both show enhanced photocurrents for hydrogen evolution. The potential of the former is shifted to positive direction by more than 0.3V; that of the latter 0.25V. The photoresponses of p-type epitaxial silicon (p+/p-Si) cathode is found to be larger than those of p-type single crystal silicon(p-Si) cathode. The scanning electron microscope photos show that the tungsten-nickel deposition film consists of discontinuous clusters rather than a continuous film.