掺铁碳化硅陶瓷的制备及其吸波性能

doi:10.11944/j.issn.1000-0518.2018.02.170080

摘要/Abstract

摘要：

将羰基铁和液态聚碳硅烷(LPCS)反应生成的铁(Fe)溶胶与固态聚碳硅烷(PCS)混合,合成出不同Fe质量分数的PCS先驱体,然后经氧化交联和高温热解制备了不同Fe质量分数的磁性碳化硅陶瓷(Fe/SiC),系统地研究了Fe元素的引入对SiC陶瓷的组成、结构、磁性能和介电性能的影响规律。研究发现,当Fe质量分数小于8.94%时,在热解过程中,Fe元素可以显著促进SiC_xO_y的分解,生成β-SiC,且随着Fe质量分数的增加,β-SiC的结晶峰越来越强;但随着Fe质量分数继续增加,达11.78%时,则主要生成Fe₃Si;Fe/SiC陶瓷均呈铁磁性,其饱和磁化强度随着Fe质量分数的增加而呈指数形式增加;当Fe质量分数为4.19%时Fe/SiC陶瓷在12.4 GHz具有最小的反射损耗,为-9.4 dB,同时低于-5 dB的带宽为2.4 GHz,Fe质量分数为8.94%时,低于-5 dB的带宽则为3.7 GHz,可用作良好的微波吸收材料。

关键词: 碳化硅陶瓷, 磁损耗, 介电损耗, 微波吸收材料

Abstract:

Different mass fraction of iron-containing silicon carbide(Fe/SiC) ceramics was successfully prepared by firstly synthesizing iron(Fe)-containing precursor via blending Fe colloids formed by the reaction of liquid polycarbosilane(PCS) and carbonyl iron with solid PCS and then the cross-linking and pyrolysis. The effects of the introduction of Fe on the component, structure, and magnetic and dielectric properties were systematically studied. When the mass fraction of iron is less than 8.94%, Fe element can significantly promote the decomposition of SiC_xO_y and generate β-SiC, and the crystallization peak of β-SiC is sharper with increased Fe. But when the Fe mass fraction increases to 11.78%, the main product is Fe₃Si; Fe-SiC ceramics are all ferromagnetic, and their saturation magnetization increases exponentially with the increase of iron. Fe/SiC ceramic with 4.19% Fe has a minimum -9.4 dB reflection loss at 12.4 GHz. The bandwidths of less than -5 dB for Fe/SiC cermic with 4.19% and 8.94% Fe are 2.4 GHz and 3.7 GHz, respectively, which can be used as good microwave-absorption materials.

Key words: SiC ceramics, magnetic loss, dielectric loss, microwave-absorption material

刘星煜, 胡志明, 吴鹏飞, 董喜超, 郭长青, 苏智明, 刘安华. 掺铁碳化硅陶瓷的制备及其吸波性能[J]. 应用化学, 2018, 35(2): 224-231.

LIU Xingyu, HU Zhiming, WU Pengfei, DONG Xichao, GUO Changqing, SU Zhiming, LIU Anhua. Processing and Microwave-absorption Properties of Iron-containing SiC Ceramics[J]. Chinese Journal of Applied Chemistry, 2018, 35(2): 224-231.

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