不同化学镀液中p－Si上激光诱导局部沉积铜

摘要/Abstract

摘要： 在化学镀铜浴液中,p-Si片在彼长为514.5nm的激光束的照射下,得到了选择性的铜镀层。采用AEs、SEM、RBS和电学技术对比了在3种含不同还原剂的镀液中得到的镀层的形貌、组成、界面扩散及电学性质;探讨了液相激光诱导化学沉积铜的机理。

关键词: 化学镀铜, 激光诱导沉积

Abstract: A process is described to selectively deposit thin copper films from electroless copper plating solutions on p-silicon wafers. The p-silicon was locally irradiated using a 5 WCW Ar⁺ laser. At the irradiated area,the copper film was formed.In this process.three kinds of thin copper films were obtained from the solutions containing different reductants. Composition and properties of the deposits were investigated using AES, SEM and RBS techniques.

Key words: electroless plating, laser-induced deposition

姜贵凤, 郁祖湛. 不同化学镀液中p－Si上激光诱导局部沉积铜[J]. 应用化学, 1996, 0(2): 18-21.

Jiang Guifeng, Yu Zuzhan. Laser-Induced Selective Deposition of Copper on p-Silicon Wafers[J]. Chinese Journal of Applied Chemistry, 1996, 0(2): 18-21.

[1]	张佳佳, 俞丹, 王炜. 氯化钯掺杂的羧基丁苯胶乳薄膜的制备及用于化学镀铜性能[J]. 应用化学, 2014, 31(05): 589-593.
[2]	崔启明, 江志裕, 郁祖湛, 应质峰. p-Si上激光诱导局部沉积铂[J]. 应用化学, 1998, 0(4): 104-106.
[3]	曾鑫, 汪亚妹, 郁祖湛. 聚酰亚胺上激光诱导直接镀钯[J]. 应用化学, 1994, 0(5): 18-21.

不同化学镀液中p－Si上激光诱导局部沉积铜

Laser-Induced Selective Deposition of Copper on p-Silicon Wafers

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