应用化学 ›› 1984, Vol. 0 ›› Issue (4): 30-33.

• 研究论文 • 上一篇    下一篇

具有金属薄层的p-Si阴极在碱溶液中的光电化学性能

王士勋, 李国铮, 徐国宪   

  1. 山东大学化学系
  • 收稿日期:1984-04-09 修回日期:1984-06-19 出版日期:1984-12-10 发布日期:1984-12-10
  • 基金资助:
    中国科学院科学基金

PHOTOELECTROCHEMICAL CHARACTERISTICS OF p-Si CATHODES COATING WITH THIN METAL FILM IN ALKALINE SOLUTION

Wang shixun, Li Guozheng, Xu Guoxian   

  1. Department of Chemistry, Shandong University, Jinan
  • Received:1984-04-09 Revised:1984-06-19 Published:1984-12-10 Online:1984-12-10

摘要: 本文用循环伏安曲线和恒电位极化方法考察了具有金属薄层的p型单晶外延硅(p+/p-Si)阴极在碱溶液中的光电化学性能。结果表明,镀有钨-镍合金层的p+/p-Si阴极和镀有钯的p+/p-Si阴极,使氢析出的光电流明显增加。前者的电位比光电流达到相同值的空白p+/p-Si电极向正方移动了0.3V以上,后者移动0.25V。同时对p型外延硅(p+/p-Si)阴极比p型单晶硅(p-Si)阴极光响应较大的实验结果作了初步解释。扫描电镜结果显示,钨-镍合金沉积层是由许多不连续的“团块”构成的,而不是连续层。

Abstract: Photoelectrochemical characteristics of p-type epitaxial silicon (p+/p-Si)cathodes coating with a thin metal film in alkaline solution have been investigated by cyclic yoltammetric and potentiostatic method. It turns out that the p+/p-Si cathodes coating with tungsten-nickel alloy and with palladium both show enhanced photocurrents for hydrogen evolution. The potential of the former is shifted to positive direction by more than 0.3V; that of the latter 0.25V. The photoresponses of p-type epitaxial silicon (p+/p-Si) cathode is found to be larger than those of p-type single crystal silicon(p-Si) cathode. The scanning electron microscope photos show that the tungsten-nickel deposition film consists of discontinuous clusters rather than a continuous film.