应用化学 ›› 1998, Vol. 0 ›› Issue (4): 104-106.

• 研究论文 • 上一篇    下一篇

p-Si上激光诱导局部沉积铂

崔启明1, 江志裕1, 郁祖湛1, 应质峰2   

  1. 1. 复旦大学化学系 上海 200433;
    2. 复旦大学物理系 上海
  • 收稿日期:1997-11-04 修回日期:1998-03-23 出版日期:1998-08-10 发布日期:1998-08-10

Laser-Induced Partial Deposition of Pt on p-Silicon Wafers

Cui Qiming1, Jiang Zhiyu1, Yu Zuzhan1, Ying Zhifeng2   

  1. 1. Department of Chemistry, Fudan University, Shanghai 200433;
    2. Department of Physics, Fudan University, Shanghai
  • Received:1997-11-04 Revised:1998-03-23 Published:1998-08-10 Online:1998-08-10

摘要: 现代电子工业中,电子器件基体材料多为半导体或绝缘体,因此,不用外加电源的激光诱导微区沉积技术引起了人们的重视[1~6].这种高度选择性、高速沉积性、工艺简单的技术在电接插件局部镀,多芯层模块制作中的基板联线,加成法制造微带电路及其修复,半导体集成电路中布线的修复等方面有着广泛的应用前景.

关键词: 电镀铂, 激光诱导沉积, p-Si

Abstract: The partial deposit films on p-silicon wafers were formed from three kinds of plating solution: chloro-platinic acid, potassium tetranitroplatinate and diammine platinium dinitrate under Nd: YAG laser irradiation.The compositions and properties of the depositswere investigated by AES, SEM and XPS techniques.The Pt deposits have ohmic contactwith p-type silicon.

Key words: platinium plating, laser induced deposition, p-silicon