应用化学 ›› 1998, Vol. 0 ›› Issue (2): 60-63.
• 研究论文 • 上一篇 下一篇
尚文, 刘杏芹, 汤笑婷, 沈瑜生
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Shang Wen, Liu Xingqin, Tang Xiaoting, Shen Yusheng
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摘要： 按CdSbxSn1-xO3进行化学量配比,以化学共沉淀法制得系列掺锑CdSnO3固溶体粉料。XRD分析结果表明,掺锑固溶的x值范围为0 关键词: CdSnO3, 固溶体, 导电机制, 气敏材料 Abstract: Sb-doped CdSnO3 solid solution powder was prepared by chemical coprecipitation in accordance with the formula CdSbxSn1-xO3. XRD results indicated the 0<x<0.3. The electric resistance of the samples markedly decreased at first and then increased gradually with the doped Sb content. Samples with x=0.02 and 0.25 showed the lowest value of resistance. The mechanisms of solid solubility and conductivity of the system have been discussed. Key words: CdSnO3, solid solution, conductive mechanism, gas sensing material 引用本文 尚文, 刘杏芹, 汤笑婷, 沈瑜生. 掺锑CdSnO3体系的固溶与导电机制研究[J]. 应用化学, 1998, 0(2): 60-63. Shang Wen, Liu Xingqin, Tang Xiaoting, Shen Yusheng. Study on the Solid Solution and Conductive Mechanism of Sb doped CdSnO3 System[J]. Chinese Journal of Applied Chemistry, 1998, 0(2): 60-63. 使用本文 0 / / 推荐 导出引用管理器 EndNote|Ris|BibTeX 链接本文: http://yyhx.ciac.jl.cn/CN/ http://yyhx.ciac.jl.cn/CN/Y1998/V0/I2/60
关键词: CdSnO3, 固溶体, 导电机制, 气敏材料
Abstract: Sb-doped CdSnO3 solid solution powder was prepared by chemical coprecipitation in accordance with the formula CdSbxSn1-xO3. XRD results indicated the 0<x<0.3. The electric resistance of the samples markedly decreased at first and then increased gradually with the doped Sb content. Samples with x=0.02 and 0.25 showed the lowest value of resistance. The mechanisms of solid solubility and conductivity of the system have been discussed.
Key words: CdSnO3, solid solution, conductive mechanism, gas sensing material
尚文, 刘杏芹, 汤笑婷, 沈瑜生. 掺锑CdSnO3体系的固溶与导电机制研究[J]. 应用化学, 1998, 0(2): 60-63.
Shang Wen, Liu Xingqin, Tang Xiaoting, Shen Yusheng. Study on the Solid Solution and Conductive Mechanism of Sb doped CdSnO3 System[J]. Chinese Journal of Applied Chemistry, 1998, 0(2): 60-63.
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