绒面掺氟二氧化锡透明导电膜的制备

摘要/Abstract

摘要： 透明导电膜常见的有ITO(铟锡氧化物)^[1],ATO(SnO₂掺Sb)^[2],FTO(SnO₂掺F)^[3]等。此类透明导电膜被用作制备非晶硅太阳能电池的材料,在电分析化学中用作性能良好的光透电极已取得了可喜的成果^[4]。绒面FTO膜具有高电导和高可见光透过性,在改善非晶硅太阳电池的稳定性、提高转换效率、降低成本等方面具有重要的意义^[5-6]。本文报道用CVD法,从无水四氯化锡和氟化乙烯制备FTO膜的最佳工艺条件。

关键词: 掺杂SnO₂, 导电膜, 氟化乙烯, CVD

Abstract: The technological process of textured FTO(SnO₂doped with F) film by CVD technique is reported. The optimum conditions for the preparation of textured FTO films of 30×30cm² with R_sq～10Ω/sq,T～85%, film unevenness<±5% are: Tg=450～50℃, flow rate of ethylene fluoride:0.15～0.30L/min.

Key words: doped tin oxide, semiconductive film, ethylene fluoride chemical vapour deposition

韩文俊, 买光昕, 李斌, 魏培海, 陈友鹏, 李淑英. 绒面掺氟二氧化锡透明导电膜的制备[J]. 应用化学, 1992, 0(5): 101-103.

Han Wenjun, Mai Guangxin, Li Bin, Wei Peihai, Chen Youpeng, Li Shuying. PREPARATION OF TRANSPARENT ELECTRICALLY CONDUCTIVE TEXTURED SnO₂ DOPED WITH F FILM(FTO)[J]. Chinese Journal of Applied Chemistry, 1992, 0(5): 101-103.