中华医学超声杂志

应用化学 ›› 1988, Vol. 0 ›› Issue (5): 93-95.

• 研究简报 • 上一篇    下一篇

n-GaAs为基的光电化学电池输出特性

钱道荪, 孙立中, 沈毅   

  1. 上海交通大学应用化学系
  • 收稿日期:1987-10-12 修回日期:1988-01-20 出版日期:1988-10-10 发布日期:1988-10-10

A STUDY OF THE OUTPUT CHARACTERISTICS OF PHOTO ELECTROCHEMICAL CELL(PEC)BASED ON n-GaAs

Qian Daosun, Sun Lizbong, Shen Yi   

  1. Deportment of Applied Chemistry, Shanghai Jiaotong University
  • Received:1987-10-12 Revised:1988-01-20 Published:1988-10-10 Online:1988-10-10

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摘要： GaAs 的禁带宽度为1.428eV,而且是直接跃迁,是光电化学电池中很好的电极材料.一些作者研究了 n-GaAs 为基的光电化学电池[1,2].本文讨论了光强,化学刻蚀、氧化还原对浓度及离子修饰对 n-GaAs 光电化学电池输出特性的影响.所用的电极为低阻 n-GaAs[(100)面],ND=5.1×1017cm-3,试验前通高纯氮20分钟.测光强用的辐照计经上海计量局校正,其它测试方法同前文[3].

关键词: 砷化镓, 光电化学电池

Abstract: In this paper the output characteristics of PEC cell based on n-GaAs are studied.The influences of light intensity,chemical etching,concentration of redox system and ion modification on the conversion efficiency of PEC cell are observed.The conversion efficiency reaches 23.9% when the light intensity is low(9.61mW.cm-2),with the electrode being repeatedly etched and modified by Ni2+ ion.The effect of pH on the flatband potential is determined.

Key words: Gallium arsenide, Photoelectrochemical cell

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